High Gain GaAs Power FET

High Gain GaAs Power FET • +20.0dBm TYPICAL OUTPUT POWER • 11.5dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SORTED IN 5mA PER BIN RANGE

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Excelics

High Gain GaAs Power FET

[Excelics] High Gain GaAs Power FET • +20.0dBm TYPICAL OUTPUT POWER • 11.5dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SORTED IN 5mA PER BIN

文件：28.02 Kbytes 页数：2 Pages

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General Purpose GaAs FET

文件：36.44 Kbytes 页数：2 Pages

Excelics

High Efficiency Heterojunction Power FET

文件：48.24 Kbytes 页数：3 Pages

Excelics

Low Noise High Gain Heterojunction FET

[Excelics] Low Noise High Gain Heterojunction FET • TYPICAL 0.8dB NOISE FIGURE AND 11.0dB ASSOCIATED GAIN AT 12GHz • 0.3 X 250 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES SUPER LOW NOISE, HIGH GAIN AND HIGH RELIABILITY • Idss SORTED IN 5mA

文件：25.26 Kbytes 页数：2 Pages

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