Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +23.5dBm TYPICAL OUTPUT POWER • 7.0 dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND R

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EXCELICS

Low Distortion GaAs Power FET

[Excelics] Low Distortion GaAs Power FET • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +23.5dBm TYPICAL OUTPUT POWER • 7.0 dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LIN

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Low Distortion GaAs Power FET

Excelics

High Efficiency Heterojunction Power FET

High Efficiency Heterojunction Power FET • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +25.5dBm TYPICAL OUTPUT POWER • 7.0dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFF

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EXCELICS

High Efficiency Heterojunction Power FET

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