Low Distortion GaAs Power FET

FEATURES • +28.0dBm TYPICAL OUTPUT POWER • 19.5dB TYPICAL POWER GAIN AT 2GHz • 0.5 X 1200 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION AND PLATED HEAT SINK • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SORTED IN 30mA PER BIN RANGE

文件：50.79 Kbytes 页数：2 Pages

EXCELICS

Low Distortion GaAs Power FET

[Excelics] Features • LOW COST SURFACE-MOUNT PLASTIC PACKAGE • +28.0dBm TYPICAL OUTPUT POWER • 14.0dB TYPICAL POWER GAIN AT 2GHz • 0.7dB TYPICAL NOISE FIGURE AT 2GHz • +42dBm TYPICAL OUTPUT 3rd ORDER INTERCEPT POINT AT 2GHz • 0.5 X 2400 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION

文件：29.62 Kbytes 页数：2 Pages

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On/Off, Spring Return, AC 100...240 V

文件：759.54 Kbytes 页数：2 Pages

BELIMO

On/Off, Spring Return, AC 100...240 V

文件：894.63 Kbytes 页数：2 Pages

BELIMO

Low Distortion GaAs Power FET

文件：23.23 Kbytes 页数：2 Pages

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