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Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +28.0dBm TYPICAL OUTPUT POWER • 9.5dB TYPICAL POWER GAIN AT 12GHz • HIGH BVgd FOR 10V BIAS • 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SO

文件：28.03 Kbytes 页数：2 Pages

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