Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +25.0dBm TYPICAL OUTPUT POWER • 10.5dB TYPICAL POWER GAIN AT 12GHz • HIGH BVgd FOR 10V BIAS • 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SO

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Low Distortion GaAs Power FET

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10-14V low distortion GaAs power FET

Excelics

8 PIN SOP 3.3V HIGH SPEED - 10MBit/s LOGIC GATE PHOTOCOUPLER

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EVERLIGHT

台湾亿光

High Efficiency Heterojunction Power FET

[Excelics] High Efficiency Heterojunction Power FET Features • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +26dBm TYPICAL OUTPUT POWER • 9.0dB TYPICAL POWER GAIN AT 12 GHZ • 0.4 dB TYPICAL NOISE FIGURE AT 2GHz • 20 dB TYPICAL ASSOCIATED GAIN AT 2 GHz • 0.3 X 600 MICRON RECESSED “MUSHROOM

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High Efficiency Heterojunction Power FET

High Efficiency Heterojunction Power FET • +26.5dBm TYPICAL OUTPUT POWER • 10.5dB TYPICAL POWER GAIN FOR EPA060A AND 11.5dB FOR EPA060AV AT 18GHz • 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND R

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