N-Channel Power MOSFET

Features • 2.5V drive • Built-in gate protection resistor • Best suited for LiB charging and discharging switch • Common-drain type • Halogen free compliance

文件：290.39 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

General-Purpose Switching Device Applications

Features • 2.5V drive • Built-in gate protection resistor • Best suited for LiB charging and discharging switch • Common-drain type • Halogen free compliance

文件：209.36 Kbytes 页数：5 Pages

ONSEMI

安森美半导体

MOSFET N-CH 24V 6A EFCP

ONSEMI

安森美半导体

Power-Off Protection 짹5 V, 12 V, Quad SPST Switches with 5 廓 On Resistance

GENERAL DESCRIPTION The ADG4612/ADG4613 contain four independent single pole/single-throw (SPST) switches. The ADG4612 switches are turned on with Logic 1 on the appropriate control input. The ADG4613 has two switches with digital control logic similar to that of the ADG4612; the logic is inver

文件：393.95 Kbytes 页数：24 Pages

AD

亚德诺

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：721.17 Kbytes 页数：5 Pages

HMSEMI

华之美半导体

Complementary Trench MOSFET

■ Features ● N-Channel : VDS (V) = 60V ID = 4.5 A (VGS = 10V) RDS(ON)

文件：2.54125 Mbytes 页数：7 Pages

KEXIN

科信电子