Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +33.5dBm TYPICAL OUTPUT POWER • 18.0dB TYPICAL POWER GAIN AT 2GHz • High BVgd FOR 10V BIAS • 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION AND PLATED HEAT SINK • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND R

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EXCELICS

Low Distortion GaAs Power FET

[Excelics] Low Distortion GaAs Power FET • +33.5dBm TYPICAL OUTPUT POWER • 18.0dB TYPICAL POWER GAIN AT 2GHz • High BVgd FOR 10V BIAS • 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION AND PLATED HEAT SINK • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LIN

文件：33.6 Kbytes 页数：2 Pages

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Low Distortion GaAs Power FET

Excelics

Phase sequence monitoring

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PHOENIXPHOENIX CONTACT

菲尼克斯德国菲尼克斯电气集团

Phase sequence monitoring

文件：141.73 Kbytes 页数：6 Pages

PHOENIXPHOENIX CONTACT

菲尼克斯德国菲尼克斯电气集团

DC-6GHz High Efficiency Heterojunction Power FET

[Excelics] Features • LOW COST SURFACE-MOUNT PLASTIC PACKAGE • +36dBm TYPICAL OUTPUT POWER • 13.0dB TYPICAL POWER GAIN AT 2GHz • 0.5dB TYPICAL NOISE FIGURE AT 2GHz • +43dBm TYPICAL OUTPUT 3rd ORDER INTERCEPT POINT AT 2GHz • 0.4 X 4800 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION •

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