Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +33.5dBm TYPICAL OUTPUT POWER • 18.0dB TYPICAL POWER GAIN AT 2GHz • High BVgd FOR 10V BIAS • 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION AND PLATED HEAT SINK • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND R

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EXCELICS

Low Distortion GaAs Power FET

[Excelics] Low Distortion GaAs Power FET • +33.5dBm TYPICAL OUTPUT POWER • 18.0dB TYPICAL POWER GAIN AT 2GHz • High BVgd FOR 10V BIAS • 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION AND PLATED HEAT SINK • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LIN

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Low Distortion GaAs Power FET

Excelics

Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz

Description: The NTE480 is a 12.5 Volt epitaxial silicon NPN common emitter transistor designed for broadband applications in the 450 to 512MHz land mobile radio band. This device utilizes diffused emitter resistors to withstand infinite VSWR under operating conditions. Features: • Desi

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NTE

Metal Oxide Varistors (MOV)

Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby

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NTE

Shottky barrier diode

Features High reliability Small mold type Low VF Application Small current rectification

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ROHM

罗姆