EFA720A

Low Distortion GaAs Power FET

LowDistortionGaAsPowerFET •+35.5dBmTYPICALOUTPUTPOWER •17.5dBTYPICALPOWERGAINAT2GHz •0.5X7200MICRONRECESSED“MUSHROOM”GATE •Si3N4PASSIVATIONANDPLATEDHEATSINK •ADVANCEDEPITAXIALDOPINGPROFILEPROVIDESHIGHPOWEREFFICIENCY,LINEARITYANDRELIABILITY •IdssSORTED

EFA720A

Low Distortion GaAs Power FET

[Excelics] LowDistortionGaAsPowerFET •+35.5dBmTYPICALOUTPUTPOWER •17.5dBTYPICALPOWERGAINAT2GHz •0.5X7200MICRONRECESSED“MUSHROOM”GATE •Si3N4PASSIVATIONANDPLATEDHEATSINK •ADVANCEDEPITAXIALDOPINGPROFILEPROVIDESHIGHPOWEREFFICIENCY,LINEARITYANDRELIABILITY •

EFA720AV-CP083

Low Distortion GaAs Power FET

FEATURES •NON-HERMETICSURFACEMOUNT160MILMETALCERAMICPACKAGE •+33.5dBmOUTPUTPOWER •17.0dBTYPICALPOWERGAINAT2GHz •0.5x4800MICRONRECESSED“MUSHROOM”GATE •Si3N4PASSIVATION •ADVANCEDEPITAXIALHETEROJUNCTIONPROFLIEPROVIDESEXTRAHIGHPOWEREFFICIENCY,ANDHIGHRELIABILI

EPA720A

HighEfficiencyHeterojunctionPowerFET

•+37.5dBmTYPICALOUTPUTPOWER •19.0dBTYPICALPOWERGAINAT2GHz •0.4X7200MICRONRECESSED “MUSHROOM”GATE •Si3N4PASSIVATION •ADVANCEDEPITAXIAL HETEROJUNCTION PROFILEPROVIDESEXTRAHIGHPOWER EFFICIENCY,ANDHIGHRELIABILITY •IdssSORTEDIN180

ET720

ultralowcapacitancesteeringdiodearray

ET720

STEERINGDIODEARRAY

DESCRIPTION TheET720isalowcapacitanceandlowleakagesteeringdiodearraycapableofprotectingupto14highspeeddatalines.Itsultralowcapacitanceallowsmaintenanceofsignalintegrityforhigh-speeddatalineswhileprotectingthecircuitICsfromthedamageofseveretransients.A

ET720

STEERINGDIODEARRAY

FEATURES ✔ESDProtection>40kilovolts ✔Provides14LinesofProtection ✔LowLeakageCurrent

EX720

800AmpClampMeters

EX720

800AClampMeter

FMMT720

SILICONPOWER(SWITCHING)TRANSISTORS

FEATURES *625mWPOWERDISSIPATION *ICCONT2.5A *ICUpTo10APeakPulseCurrent *ExcellenthfeCharacteristicsUpTo10A(pulsed) *ExtremelyLowSaturationVoltageE.g.10mVTyp. *Exhibitsextremelylowequivalenton-resistance;RCE(sat)