Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +34.0dBm TYPICAL OUTPUT POWER • 18.0dB TYPICAL POWER GAIN AT 2GHz • 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION AND PLATED HEAT SINK • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SORTED

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Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • NON-HERMETIC 180MIL METAL FLANGE PACKAGE • +34.0dBm TYPICAL OUTPUT POWER • 16.5dB TYPICAL POWER GAIN AT 2GHz • 0.5 X 4800 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND

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Low Distortion GaAs Power FET

FEATURES • NON-HERMETIC SURFACE MOUNT 160MIL METAL CERAMIC PACKAGE • +33.5 dBm OUTPUT POWER AT 1dB COMPRESSION • 16.0 dB GAIN AT 2 GHz • 0.5x4800 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH REL

文件：44.69 Kbytes 页数：2 Pages

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DC-4GHz Low Distortion GaAs Power FET

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8-12V low distortion GaAs power FET

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