Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +31.0dBm TYPICAL OUTPUT POWER • 8.5dB TYPICAL POWER GAIN FOR EFA240B AND 10.5dB FOR EFA240BV AT 12GHz • 0.3 X 2400 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY

文件：39.95 Kbytes 页数：2 Pages

EXCELICS

Low Distortion GaAs Power FET

文件：47.29 Kbytes 页数：2 Pages

EXCELICS

Low Distortion GaAs Power FET

Excelics

Silicon planar type

文件：41.87 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Large power dissipation: PD = 1 W • Zener voltage VZ: 4.7 V to 51 V • Zener voltage allowable deviation: 10 • Auto mounting possible

文件：52.51 Kbytes 页数：3 Pages

PANASONIC

松下

RF POWER TRANSISTORS NPN SILICON

文件：129.9 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉