Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +26.0dBm TYPICAL OUTPUT POWER • 10.0dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SORTED IN 15mA PER BIN RANGE

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Excelics

Low Distortion GaAs Power FET

[Excelics] Low Distortion GaAs Power FET • +26.0dBm TYPICAL OUTPUT POWER • 10.0dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY • Idss SORTED IN 15mA P

文件：32.53 Kbytes 页数：2 Pages

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Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +23.5dBm TYPICAL OUTPUT POWER • 7.0 dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND R

文件：23.51 Kbytes 页数：2 Pages

Excelics

Low Distortion GaAs Power FET

[Excelics] Low Distortion GaAs Power FET • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +23.5dBm TYPICAL OUTPUT POWER • 7.0 dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 800 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LIN

文件：25.69 Kbytes 页数：2 Pages

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Low Distortion GaAs Power FET

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8-12V low distortion GaAs power FET

Excelics

Low Distortion GaAs Power FET

Excelics