Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +25.0dBm TYPICAL OUTPUT POWER • 10.5dB TYPICAL POWER GAIN FOR EFA060B AND 12.0dB FOR EFA060BV AT 12GHz • 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY

文件：33.93 Kbytes 页数：2 Pages

EXCELICS

Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +24.0dBm TYPICAL OUTPUT POWER • 7.5 dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND R

文件：23.59 Kbytes 页数：2 Pages

EXCELICS

Low Distortion GaAs Power FET

[Excelics] Low Distortion GaAs Power FET • NON-HERMETIC LOW COST CERAMIC 70mil PACKAGE • +24.0dBm TYPICAL OUTPUT POWER • 7.5 dB TYPICAL POWER GAIN AT 12GHz • 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LIN

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Low Distortion GaAs Power FET

Low Distortion GaAs Power FET • +25.0dBm TYPICAL OUTPUT POWER • 10.5dB TYPICAL POWER GAIN FOR EFA060B AND 12.0dB FOR EFA060BV AT 12GHz • 0.3 X 600 MICRON RECESSED “MUSHROOM” GATE • Si3N4 PASSIVATION • ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY

文件：33.93 Kbytes 页数：2 Pages

EXCELICS

Low Distortion GaAs Power FET

Excelics