40V PNP LOW SATURATION TRANSISTOR IN U-DFN2020-3

Features  BVCEO > -40V  hFE Specified up to -3A for High Current Gain Hold Up  Low Profile 0.6mm High Package for Thin Applications  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specifi

文件：416 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：2C5；Package：U-DFN2020-3；40V PNP LOW SATURATION TRANSISTOR IN U-DFN2020-3

Features  BVCEO > -40V  hFE Specified up to -3A for High Current Gain Hold Up  Low Profile 0.6mm High Package for Thin Applications  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specifi

文件：416 Kbytes 页数：7 Pages

DIODES

美台半导体

PNP, 40V, 4.8A, DFN2020-3

DC-DC Converters\nCharging Circuits\nMotor Control\nPower Switches

Diodes

美台半导体

Package：3-UDFN 裸露焊盘；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 40V 4.8A 3DFN

PAM

龙鼎微