丝印：2C5；Package：U-DFN2020-3；40V PNP LOW SATURATION TRANSISTOR IN U-DFN2020-3

Features  BVCEO > -40V  hFE Specified up to -3A for High Current Gain Hold Up  Low Profile 0.6mm High Package for Thin Applications  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specifi

文件：416 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：2C5；Package：SOD-123；ZENER DIODE

Features · Low Zener Impedance · Power Dissipation of 500mW · High Stability and High Reliability

文件：252.72 Kbytes 页数：2 Pages

DAESAN

丝印：2C5；Package：SOD-123FL；ZENER DIODE

Features Glass passivated chip Built-in strain relief Low inductance High peak reverse power dissipation Low reverse leakage For use in stabilizing and clipping with high power rating RoHS compliant

文件：518.82 Kbytes 页数：3 Pages

DAESAN

丝印：2C5；Package：DO-214AA；Surface Mount Zener Diodes

文件：257.31 Kbytes 页数：3 Pages

ANOVA

林朋科技

丝印：2C5Q；Package：VQFN-HR；LMR436x0-Q1, 36V, 1A / 2A, Automotive Buck Converter With 2.5μA IQ at 150°C TJMAX in 4mm2 HotRod™ QFN

1 Features • AEC-Q100-qualified for automotive applications: – Temperature grade 1: –40°C to +125°C, TA • Functional Safety-Capable – Documentation available to aid functional safety system design • Greater than 85 efficiency at 1mA – 1.2μA total non-switching IQ at 13.5VIN, fixed 3.3VOUT

文件：4.79809 Mbytes 页数：59 Pages

TI

德州仪器

丝印：2C5Q；Package：VQFN-HR；LMR436x0-Q1, 36V, 1A / 2A, Automotive Buck Converter With 2.5μA IQ at 150°C TJMAX in 4mm2 HotRod™ QFN

1 Features • AEC-Q100-qualified for automotive applications: – Temperature grade 1: –40°C to +125°C, TA • Functional Safety-Capable – Documentation available to aid functional safety system design • Greater than 85% efficiency at 1mA – 1.2μA total non-switching IQ at 13.5VIN, fixed 3.3

文件：4.68485 Mbytes 页数：55 Pages

TI

德州仪器

丝印：2C50；Package：VSSOP；UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc

文件：3.46603 Mbytes 页数：56 Pages

TI

德州仪器

丝印：2C50；Package：VSSOP；UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc

文件：3.20649 Mbytes 页数：56 Pages

TI

德州仪器

丝印：2C51；Package：VSSOP；UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc

文件：3.46603 Mbytes 页数：56 Pages

TI

德州仪器

丝印：2C51；Package：VSSOP；UCCx8C5x Low-Power Current-Mode High-Performance PWM Controller for Si and SiC MOSFETs

1 Features • Undervoltage lockout options to support both Si and SiC MOSFET applications • 30-V VDD absolute maximum voltage • 1-MHz maximum fixed frequency operation • 50-μA startup current, 75-μA maximum • Low operating current: 1.3 mA (at fOSC = 52 kHz) • Fast 35-ns, cycle-by-cycle overc

文件：3.20649 Mbytes 页数：56 Pages

TI

德州仪器