| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-CHANNELMOSFETinaTO-220PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
N-CHANNELMOSFETinaTO-263PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
OptiMOS??Power-Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,92A,RDS(ON)=8.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=10.5mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,92A,RDS(ON)=8.2mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=10.5mW@VGS=4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
iscN-ChannelMOSFETTransistor •FEATURES •WithTO-220packaging •Lowswitchingloss •Ultralowgatecharge •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz •APPLICATIONS •Switchingapplications •AC-DCconverters •LEDlighting •Unin | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelPowerTrench짰MOSFET Description ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features •RDS(on)=8.2mΩ(Typ.)@VGS=10V,ID=75A •Fastswitch | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelEnhancementModePowerMosfet | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
N-ChannelEnhancementModePowerMosfet | FOSTERShenzhen Foster Semiconductor Co., Ltd. 福斯特半导体深圳市福斯特半导体有限公司 | FOSTER | ||
N-ChannelEnhancement InPowerProductLines | ETC1List of Unclassifed Manufacturers 未分类制造商 | ETC1 | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=100A@TC=25℃ ·DrainSourceVoltage- :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=12mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETs HiPerFETPowerMOSFETs N-ChannelEnhancementMode AvalancheRated,Highdv/dt,Lowtrr Features ●Internationalstandardpackages ●JEDECTO-264AA,epoxymeetUL94V-0,flammabilityclassification ●miniBLOCwithAluminiumnitrideisolation ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicon | IXYS IXYS Integrated Circuits Division | IXYS | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Integrated Circuits Division | IXYS | ||
N-ChannelEnhancementModePowerMOSFET | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | LEIDITECH | ||
TMOSPOWERFET100AMPERES100VOLTSRDS(on)=0.011OHM TMOSE-FET™PowerFieldEffecttransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain–to–sourcediodewithfastrecoverytime.Designedforh | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
PowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=100A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=11mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.2mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
德普微 |
22+ |
TO-252 |
65000 |
一级代理-原装现货/支持实单 |
询价 | ||
3M |
新 |
9 |
全新原装 货期两周 |
询价 | |||
3M |
2022+ |
5 |
全新原装 货期两周 |
询价 | |||
KODENSHIA |
23+ |
12000 |
询价 | ||||
DANFOSS |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
询价 | ||
DANFOSS |
24+25+/26+27+ |
车规-模块MODULE |
1880 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
DANFOSS |
21+ROHS |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
松下神视 |
继电器 |
15682 |
专做继电器只做原装货值得信赖 |
询价 | |||
FA-松下 |
2018+ |
DIP |
6200 |
假一罚十/本公司只做原装正品 |
询价 | ||
Panasonic |
2010+ |
N/A |
66 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 |
相关规格书
更多- DP104C
- DP5380V
- DP804C
- DP8304BN
- DP83222V
- DP83223V-1
- DP83261AVF
- DP8344AV
- DP83815CVNG
- DP83815DVNG
- DP83820BVUW
- DP83840AVCE
- DP83843BVJE
- DP83847ALQA56A
- DP83901AV
- DP83902AVJG
- DP83902V
- DP83907VF
- DP8390CV
- DP83910AN
- DP83916VF
- DP8391AV
- DP8392AN
- DP8392CN-1
- DP8392CV-1
- DP83932CVF-25
- DP83934AVQB
- DP83934CVUL-25
- DP83936AVUL-25
- DP83955AV
- DP8422AV-25
- DP8459V-10
- DP84605RM-4
- DP8463BV-12
- DP8464BV-2
- DP8464BV-3
- DP8473AV
- DP8473V
- DP8531V
- DP8570AV
- DPS05U09D
- DPS326743
- DQ2816A-250
- DQ2864-250
- DQ8023A
相关库存
更多- DP408P
- DP704C
- DP8304BJ
- DP8311N
- DP83223V
- DP83257VF
- DP8340N
- DP8344BV
- DP83815DUJB
- DP83816AVNG
- DP83821BVM
- DP83840VCE
- DP83846AVHG
- DP83850CVF
- DP83902AV
- DP83902AVLJ
- DP83905AVQB
- DP8390CN
- DP8390DV
- DP83910AV
- DP8391AN
- DP83924BVCE
- DP8392CN
- DP8392CV
- DP83932BVF
- DP83932CVF-33
- DP83934CVUL-20
- DP83936AVUL-20
- DP83950BVQB
- DP8421AV-25
- DP8458V-25
- DP8459V-25
- DP8462V-3
- DP8464BN-2
- DP8464BV-23
- DP8468BV-3
- DP8473N
- DP84910VHG-36
- DP8534V
- DP8573AV
- DPS326718
- DPS426759
- DQ2817A-250
- DQ28C256-200
- DRV102F
