600V N-Channel Power MOSFET

Features ● RDS(ON)

文件：1.78132 Mbytes 页数：9 Pages

DYELEC

迪一电子

TMOS POWER FET 2.0 AMPERES 600 VOLTS

文件：271.17 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS

TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand h

文件：219.5 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉

TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS

TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand h

文件：219.5 Kbytes 页数：8 Pages

MOTOROLA

摩托罗拉