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DMT3009LFVW

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Backlighting  Power Management Functions  DC-DC Converters Features and Be

文件:732.21 Kbytes 页数:7 Pages

DIODES

美台半导体

DMT3009LFVW-13

丝印:SH9;Package:PowerDI3333-8;30V N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Backlighting  Power Management Functions  DC-DC Converters Features and Be

文件:732.21 Kbytes 页数:7 Pages

DIODES

美台半导体

DMT3009LFVW-7

丝印:SH9;Package:PowerDI3333-8;30V N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Backlighting  Power Management Functions  DC-DC Converters Features and Be

文件:732.21 Kbytes 页数:7 Pages

DIODES

美台半导体

DMT3009LFVW

30V N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications. •Low RDS(ON) – ensures on state losses are minimized\n•Occupies just 33% of the board area occupied by SO-8 enabling smaller end product\n;

Diodes

美台半导体

DMT3009LFVWQ

30V N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. •Low RDS(ON) – Ensures On State Losses Are Minimized\n•100% Unclamped Inductive Switching (Test in Production) – Ensures More Reliable\n•Small Form Factor Thermally Efficient Package Enables Higher Density End Products\n•Occupies Just 33% of The Board Area Occupied by SO-8 Enabling Smaller E;

Diodes

美台半导体

技术参数

  • Automotive Compliant PPAP:

    DMT3009LFVWQ

  • Polarity:

    N

  • ESD Diodes:

    No

  • VDS:

    30 V

  • VGS:

    20 ±V

  • IDS @ TA = +25°C:

    12 A

  • PD @ TA = +25°C:

    2.3 W

  • RDS(ON) Max @ VGS (10V):

    11 mΩ

  • RDS(ON) Max @ VGS (4.5V):

    13 mΩ

  • RDS(ON) Max @ VGS (2.5V):

    20 mΩ

  • RDS(ON) Max @ VGS (1.8V):

    N/A mΩ

  • VGS (th) Max:

    3 V

  • QG Typ @ VGS = 4.5V (nC):

    5.8 nC

  • QG Typ @ VGS = 10V (nC):

    12 nC

  • Packages:

    PowerDI3333-8 (SWP) (Type UX)

供应商型号品牌批号封装库存备注价格
NK/南科功率
2025+
DFN3333-8
986966
国产
询价
DIODES/美台
24+
PowerDI3333-8(SWP)(T
786000
全新原装假一罚十
询价
Diodes Incorporated
21+
PowerDI3333-8(SWP)UX 类
3000
进口原装!长期供应!绝对优势价格(诚信经营)!!
询价
DIODES(美台)
2447
PowerDI3333-8
105000
2000个/圆盘一级代理专营品牌!原装正品,优势现货,
询价
Diodes(美台)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
DIODES/美台
23+
NA
6000
原装正品假一罚百!可开增票!
询价
DIODES/美台
23+
PowerDI3333-8
50000
全新原装正品现货,支持订货
询价
DIODES/美台
20+
DFN3.3x3.3
120000
只做原装 可免费提供样品
询价
Diodes Incorporated
2022+
8-PowerVDFN
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
DIODES(美台)
24+
PowerDI33338
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
更多DMT3009LFVW供应商 更新时间2025-12-7 14:01:00