型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
100V N-CHANNEL ENHANCEMENT MODE MOSFET Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. High Frequency Switching Synchronous Rectification DC-DC Converters Feat 文件:466.99 Kbytes 页数:7 Pages | DIODES 美台半导体 | DIODES | ||
丝印:T10H09LS;Package:SO-8;100V N-CHANNEL ENHANCEMENT MODE MOSFET Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. High Frequency Switching Synchronous Rectification DC-DC Converters Feat 文件:466.99 Kbytes 页数:7 Pages | DIODES 美台半导体 | DIODES | ||
100V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits • High Conversion Efficiency • Low RDS(ON)—Minimizes On-State Losses • Low Input Capacitance • Fast Switching Speed • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications This MOSFET 文件:364.3 Kbytes 页数:7 Pages | DIODES 美台半导体 | DIODES | ||
丝印:T10H09SS;Package:SO-8;100V N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits • High Conversion Efficiency • Low RDS(ON)—Minimizes On-State Losses • Low Input Capacitance • Fast Switching Speed • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications This MOSFET 文件:364.3 Kbytes 页数:7 Pages | DIODES 美台半导体 | DIODES | ||
100V N-CHANNEL ENHANCEMENT MODE MOSFET Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Backlighting Power management functions DC-DC converters Features and Benefits 100 Unclamped Induc 文件:581.53 Kbytes 页数:7 Pages | DIODES 美台半导体 | DIODES | ||
丝印:T1010LSQ;Package:SO-8;100V N-CHANNEL ENHANCEMENT MODE MOSFET Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Backlighting Power management functions DC-DC converters Features and Benefits 100 Unclamped Induc 文件:581.53 Kbytes 页数:7 Pages | DIODES 美台半导体 | DIODES | ||
100V N-CHANNEL ENHANCEMENT MODE MOSFET Description This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications. Applications Power Management Functions DC-DC Converters Backlighting Features 100 Unclamped Inductive Switching – Ensures M 文件:488.79 Kbytes 页数:7 Pages | DIODES 美台半导体 | DIODES | ||
丝印:T1H025L;Package:TO252;100V N-CHANNEL ENHANCEMENT MODE MOSFET Description This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications. Applications Power Management Functions DC-DC Converters Backlighting Features 100 Unclamped Inductive Switching – Ensures M 文件:488.79 Kbytes 页数:7 Pages | DIODES 美台半导体 | DIODES | ||
100V N-CHANNEL ENHANCEMENT MODE MOSFET Features 0.6mm Profile – Ideal for Low Profile Applications PCB Footprint of 4mm2 Low On-Resistance 100 Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. 文件:469.92 Kbytes 页数:7 Pages | DIODES 美台半导体 | DIODES | ||
丝印:32;Package:U-DFN2020-6;100V N-CHANNEL ENHANCEMENT MODE MOSFET Features 0.6mm Profile – Ideal for Low Profile Applications PCB Footprint of 4mm2 Low On-Resistance 100 Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. 文件:469.92 Kbytes 页数:7 Pages | DIODES 美台半导体 | DIODES |
技术参数
- Automotive Compliant PPAP:
No
- Polarity:
N
- ESD Diodes:
No
- VDS:
100 V
- VGS:
20 ±V
- IDS @ TA = +25°C:
12.4 A
- PD @ TA = +25°C:
2.1 W
- RDS(ON) Max @ VGS (10V):
8.8 mΩ
- RDS(ON) Max @ VGS (4.5V):
12.9 mΩ
- RDS(ON) Max @ VGS (2.5V):
N/A mΩ
- RDS(ON) Max @ VGS (1.8V):
N/A mΩ
- VGS (th) Max:
2.5 V
- QG Typ @ VGS = 4.5V (nC):
20.2 nC
- QG Typ @ VGS = 10V (nC):
N/A nC
- Packages:
V-DFN3333-8
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
CORNELLDUBIL |
05+ |
原厂原装 |
4770 |
只做全新原装真实现货供应 |
询价 | ||
Murata |
19+ |
100000 |
原装正品价格优势 |
询价 | |||
Panasonic |
20+ |
SSMini5-F4-B |
36800 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
23+ |
65480 |
询价 | |||||
DIODES |
25+23+ |
PowerDI50 |
29152 |
绝对原装正品全新进口深圳现货 |
询价 | ||
Murata Electronics |
23+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
INTERCONNECT |
10000 |
ADM |
550000 |
询价 | |||
Semtech |
24+ |
SMD |
15600 |
电源管理IC开发工具 |
询价 | ||
Diodes Incorporated |
21+ |
TO-252,(D-Pak) |
5000 |
进口原装!长期供应!绝对优势价格(诚信经营)!! |
询价 | ||
Cornell-Dubilier |
2022+ |
1 |
全新原装 货期两周 |
询价 |
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