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DMT10H009LSS

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.  High Frequency Switching  Synchronous Rectification  DC-DC Converters Feat

文件:466.99 Kbytes 页数:7 Pages

DIODES

美台半导体

DMT10H009LSS-13

丝印:T10H09LS;Package:SO-8;100V N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.  High Frequency Switching  Synchronous Rectification  DC-DC Converters Feat

文件:466.99 Kbytes 页数:7 Pages

DIODES

美台半导体

DMT10H009SSS

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits • High Conversion Efficiency • Low RDS(ON)—Minimizes On-State Losses • Low Input Capacitance • Fast Switching Speed • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications This MOSFET

文件:364.3 Kbytes 页数:7 Pages

DIODES

美台半导体

DMT10H009SSS-13

丝印:T10H09SS;Package:SO-8;100V N-CHANNEL ENHANCEMENT MODE MOSFET

Features and Benefits • High Conversion Efficiency • Low RDS(ON)—Minimizes On-State Losses • Low Input Capacitance • Fast Switching Speed • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications This MOSFET

文件:364.3 Kbytes 页数:7 Pages

DIODES

美台半导体

DMT10H010LSSQ

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Backlighting Power management functions DC-DC converters Features and Benefits  100 Unclamped Induc

文件:581.53 Kbytes 页数:7 Pages

DIODES

美台半导体

DMT10H010LSSQ-13

丝印:T1010LSQ;Package:SO-8;100V N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Backlighting Power management functions DC-DC converters Features and Benefits  100 Unclamped Induc

文件:581.53 Kbytes 页数:7 Pages

DIODES

美台半导体

DMT10H025LK3

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications. Applications  Power Management Functions  DC-DC Converters  Backlighting Features  100 Unclamped Inductive Switching – Ensures M

文件:488.79 Kbytes 页数:7 Pages

DIODES

美台半导体

DMT10H025LK3-13

丝印:T1H025L;Package:TO252;100V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications. Applications  Power Management Functions  DC-DC Converters  Backlighting Features  100 Unclamped Inductive Switching – Ensures M

文件:488.79 Kbytes 页数:7 Pages

DIODES

美台半导体

DMT10H032LFDF

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Features 0.6mm Profile – Ideal for Low Profile Applications PCB Footprint of 4mm2 Low On-Resistance 100 Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

文件:469.92 Kbytes 页数:7 Pages

DIODES

美台半导体

DMT10H032LFDF-13

丝印:32;Package:U-DFN2020-6;100V N-CHANNEL ENHANCEMENT MODE MOSFET

Features 0.6mm Profile – Ideal for Low Profile Applications PCB Footprint of 4mm2 Low On-Resistance 100 Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

文件:469.92 Kbytes 页数:7 Pages

DIODES

美台半导体

技术参数

  • Automotive Compliant PPAP:

    No

  • Polarity:

    N

  • ESD Diodes:

    No

  • VDS:

    100 V

  • VGS:

    20 ±V

  • IDS @ TA = +25°C:

    12.4 A

  • PD @ TA = +25°C:

    2.1 W

  • RDS(ON) Max @ VGS (10V):

    8.8 mΩ

  • RDS(ON) Max @ VGS (4.5V):

    12.9 mΩ

  • RDS(ON) Max @ VGS (2.5V):

    N/A mΩ

  • RDS(ON) Max @ VGS (1.8V):

    N/A mΩ

  • VGS (th) Max:

    2.5 V

  • QG Typ @ VGS = 4.5V (nC):

    20.2 nC

  • QG Typ @ VGS = 10V (nC):

    N/A nC

  • Packages:

    V-DFN3333-8

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CORNELLDUBIL
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INTERCONNECT
10000
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24+
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进口原装!长期供应!绝对优势价格(诚信经营)!!
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Cornell-Dubilier
2022+
1
全新原装 货期两周
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更多DMT供应商 更新时间2025-10-13 19:04:00