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零件型号	下载订购	功能描述	制造商上传企业	LOGO
DMT10H009LSS-13	文件：466.99 Kbytes Page：7 Pages	丝印：T10H09LS；Package：SO-8；100V N-CHANNEL ENHANCEMENT MODE MOSFET DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance (RDS(ON))yetmaintainsuperiorswitchingperformance,makingitideal forhigh-efficiencypowermanagementapplications. HighFrequencySwitching SynchronousRectification DC-DCConverters Feat	DIODESDiodes Incorporated 美台半导体	DIODES
DMT10H009SSS	文件：364.3 Kbytes Page：7 Pages	100V N-CHANNEL ENHANCEMENT MODE MOSFET FeaturesandBenefits •HighConversionEfficiency •LowRDS(ON)—MinimizesOn-StateLosses •LowInputCapacitance •FastSwitchingSpeed •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) DescriptionandApplications ThisMOSFET	DIODESDiodes Incorporated 美台半导体	DIODES
DMT10H009SSS	文件：300 bytes Page：1 Pages	100V N-CHANNEL ENHANCEMENT MODE MOSFET; •High Conversion Efficiency\n•Low RDS(ON) – Minimizes On-State Losses\n•Low Input Capacitance\n•Fast Switching Speed\n; This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.\n\n	DiodesDiodes Incorporated 美台半导体	Diodes
DMT10H009SSS-13	文件：364.3 Kbytes Page：7 Pages	丝印：T10H09SS；Package：SO-8；100V N-CHANNEL ENHANCEMENT MODE MOSFET FeaturesandBenefits •HighConversionEfficiency •LowRDS(ON)—MinimizesOn-StateLosses •LowInputCapacitance •FastSwitchingSpeed •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) DescriptionandApplications ThisMOSFET	DIODESDiodes Incorporated 美台半导体	DIODES
DMT10H010LK3	文件：300 bytes Page：1 Pages	100V N-CHANNEL ENHANCEMENT MODE MOSFET; 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application\nLow RDS(ON) – Minimises Power Losses\nLow QG – Minimises Switching Losses; This new generation MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications.	DiodesDiodes Incorporated 美台半导体	Diodes
DMT10H010LPS	文件：300 bytes Page：1 Pages	100V N-CHANNEL ENHANCEMENT MODE MOSFET; Low On-Resistance\nFast Switching Speed\nLow Threshold\nLow Gate Drive\nLow Input Capacitance; This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.	DiodesDiodes Incorporated 美台半导体	Diodes
DMT10H010LSSQ	文件：581.53 Kbytes Page：7 Pages	100V N-CHANNEL ENHANCEMENT MODE MOSFET DescriptionandApplications ThisMOSFETisdesignedtomeetthestringentrequirementsofautomotiveapplications.ItisqualifiedtoAEC-Q101,supportedbyaPPAPandisidealforusein: Backlighting Powermanagementfunctions DC-DCconverters FeaturesandBenefits 100UnclampedInduc	DIODESDiodes Incorporated 美台半导体	DIODES
DMT10H010LSSQ-13	文件：581.53 Kbytes Page：7 Pages	丝印：T1010LSQ；Package：SO-8；100V N-CHANNEL ENHANCEMENT MODE MOSFET DescriptionandApplications ThisMOSFETisdesignedtomeetthestringentrequirementsofautomotiveapplications.ItisqualifiedtoAEC-Q101,supportedbyaPPAPandisidealforusein: Backlighting Powermanagementfunctions DC-DCconverters FeaturesandBenefits 100UnclampedInduc	DIODESDiodes Incorporated 美台半导体	DIODES
DMT10H025LK3	文件：488.79 Kbytes Page：7 Pages	100V N-CHANNEL ENHANCEMENT MODE MOSFET Description ThisnewgenerationMOSFETfeatureslowon-resistanceandfast switching,makingitidealforhighefficiencypowermanagement applications. Applications PowerManagementFunctions DC-DCConverters Backlighting Features 100UnclampedInductiveSwitching–EnsuresM	DIODESDiodes Incorporated 美台半导体	DIODES
DMT10H025LK3-13	文件：488.79 Kbytes Page：7 Pages	丝印：T1H025L；Package：TO252；100V N-CHANNEL ENHANCEMENT MODE MOSFET Description ThisnewgenerationMOSFETfeatureslowon-resistanceandfast switching,makingitidealforhighefficiencypowermanagement applications. Applications PowerManagementFunctions DC-DCConverters Backlighting Features 100UnclampedInductiveSwitching–EnsuresM	DIODESDiodes Incorporated 美台半导体	DIODES

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技术参数

Automotive Compliant PPAP：
No
Polarity：
N
ESD Diodes：
No Y/N
VDS：
100 V
VGS：
20 ±V
IDS @ TA = +25°C：
13 A
IDS @ TC = +25°C：
50 A
PD @ TA = +25°C：
2 W
PD @ TC = +25°C：
30 W
RDS(ON) Max @ VGS (10V)：
8.5 mΩ
RDS(ON) Max @ VGS (4.5V)：
12.5 mΩ
RDS(ON) Max @ VGS (2.5V)：
N/A mΩ
VGS (th) Max：
2.5 V
CISS Typ：
2361 pF
CISS Condition [@VDS]：
50 V
QG Typ @ VGS = 4.5V (nC)：
N/A nC
QG Typ @ VGS = 10V (nC)：
41
Packages：
PowerDI3333-8

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市星佑电子有限公司	DMT1D47	CORNELLDUBIL	05+	原厂原装	4770	只做全新原装真实现货供应	询价
深圳市凌旭科技有限公司	DMTH4007SPD-13	DIODES	2016+	QFN	3000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市一线半导体有限公司	DMT18424	COL	24+		120		询价
深圳市赛尔通科技有限公司	DMT11P		23+		65480		询价
千层芯半导体(深圳)有限公司	DMTX-19V15W-EZ-SYS	Semtech	24+	SMD	15600	电源管理IC开发工具	询价
深圳市鹏和科技有限公司	DMT6009LK3	DIODES	24+	TO-252	5000	全现原装公司现货	询价
上海市鑫鸿达电子	DMT4P1K-F	Cornell-Dubilier	2022+		1	全新原装货期两周	询价
深圳市华斯顿科技有限公司	DMTH8012LPS-13	DIODES	25+23+	PowerDI50	29152	绝对原装正品全新进口深圳现货	询价
深圳市粤科源兴科技有限公司	DMT-A-C-F-T-R-SG	INTERCONNECT	10000	ADM	550000		询价
上海金庆电子技术有限公司	DMT4P1K-F	Cornell-Dubilier	新		5	全新原装货期两周	询价

更多DMT供应商更新时间2025-7-28 16:22:00

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