Type DMT, Polyester Film Capacitors

文件：195.32 Kbytes 页数：3 Pages

CDE

General Purpose, High Peak Currents, High Insulation Resistance

文件：64.26 Kbytes 页数：3 Pages

CDE

丝印：DMT；Package：DO-214AA；600W Surface Mount Transient Voltage Suppressors

Features Glass passivated or planar junction Excellent clamping capability Repetition rate (duty cycle): 0.01 Low profile package and low inductance 600W Peak Pulse power capability at 10×1000μs waveform Fast response time: typically less than 1.0ps from 0V to VBR min High temperature solde

文件：3.25781 Mbytes 页数：7 Pages

UNSEMI

优恩半导体

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.  Backlighting  Power Management Functions  DC

文件：505.41 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：T89；Package：V-DFN3333-8；100V N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.  Backlighting  Power Management Functions  DC

文件：505.41 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：T89；Package：V-DFN3333-8；100V N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.  Backlighting  Power Management Functions  DC

文件：505.41 Kbytes 页数：7 Pages

DIODES

美台半导体

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications • Synchronous Rectifier • Backlighting • Power Management Functions • DC-DC Con

文件：481.66 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：T09；Package：PowerDI3333-8；100V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications • Synchronous Rectifier • Backlighting • Power Management Functions • DC-DC Con

文件：481.66 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：T09；Package：PowerDI3333-8；100V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications • Synchronous Rectifier • Backlighting • Power Management Functions • DC-DC Con

文件：481.66 Kbytes 页数：7 Pages

DIODES

美台半导体

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 90A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 9mΩ(Max)@VGS= 10V DESCRIPTION · Motor Drive, DC-DC Converter, Power Switch and Solenoid Drive.

文件：301.34 Kbytes 页数：2 Pages

ISC

无锡固电