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DMT10H032LFDF

100V N-CHANNEL ENHANCEMENT MODE MOSFET

Features 0.6mm Profile – Ideal for Low Profile Applications PCB Footprint of 4mm2 Low On-Resistance 100 Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

文件:469.92 Kbytes 页数:7 Pages

DIODES

美台半导体

DMT10H032LFDF-13

丝印:32;Package:U-DFN2020-6;100V N-CHANNEL ENHANCEMENT MODE MOSFET

Features 0.6mm Profile – Ideal for Low Profile Applications PCB Footprint of 4mm2 Low On-Resistance 100 Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

文件:469.92 Kbytes 页数:7 Pages

DIODES

美台半导体

DMT10H032LFDF-7

丝印:32;Package:U-DFN2020-6;100V N-CHANNEL ENHANCEMENT MODE MOSFET

Features 0.6mm Profile – Ideal for Low Profile Applications PCB Footprint of 4mm2 Low On-Resistance 100 Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.

文件:469.92 Kbytes 页数:7 Pages

DIODES

美台半导体

DMT10H032LFDF

100V N-CHANNEL ENHANCEMENT MODE MOSFET

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. •0.6mm Profile – Ideal for Low Profile Applications\n•PCB Footprint of 4mm2\n•Low On-Resistance\n•100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application\n•Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)\n•Halogen and Antimony Free. “;

Diodes

美台半导体

技术参数

  • Automotive Compliant PPAP:

    No

  • Polarity:

    N

  • ESD Diodes:

    N

  • VDS:

    100 V

  • VGS:

    20 ±V

  • IDS @ TA = +25°C:

    6 A

  • PD @ TA = +25°C:

    1.6 W

  • RDS(ON) Max @ VGS (10V):

    32 mΩ

  • RDS(ON) Max @ VGS (4.5V):

    46 mΩ

  • RDS(ON) Max @ VGS (2.5V):

    N/A mΩ

  • RDS(ON) Max @ VGS (1.8V):

    N/A mΩ

  • VGS (th) Max:

    2.5 V

  • QG Typ @ VGS = 4.5V (nC):

    6.3 nC

  • QG Typ @ VGS = 10V (nC):

    11.9 nC

  • Packages:

    U-DFN2020-6

供应商型号品牌批号封装库存备注价格
NK/南科功率
2025+
DFN22-6L
986966
国产
询价
DIODES/美台
23+
NA
12730
原装正品代理渠道价格优势
询价
DIODES/美台
2511
DFN2020-6
360000
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
询价
DIODES/美台
24+
N/A
500000
美台原厂超低价支持
询价
24+
N/A
57000
一级代理-主营优势-实惠价格-不悔选择
询价
更多DMT10H032LFDF供应商 更新时间2025-10-8 14:01:00