首页 >DMT10H032LFDF>规格书列表
型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
DMT10H032LFDF | 100V N-CHANNEL ENHANCEMENT MODE MOSFET Features 0.6mm Profile – Ideal for Low Profile Applications PCB Footprint of 4mm2 Low On-Resistance 100 Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. 文件:469.92 Kbytes 页数:7 Pages | DIODES 美台半导体 | DIODES | |
丝印:32;Package:U-DFN2020-6;100V N-CHANNEL ENHANCEMENT MODE MOSFET Features 0.6mm Profile – Ideal for Low Profile Applications PCB Footprint of 4mm2 Low On-Resistance 100 Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. 文件:469.92 Kbytes 页数:7 Pages | DIODES 美台半导体 | DIODES | ||
丝印:32;Package:U-DFN2020-6;100V N-CHANNEL ENHANCEMENT MODE MOSFET Features 0.6mm Profile – Ideal for Low Profile Applications PCB Footprint of 4mm2 Low On-Resistance 100 Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. 文件:469.92 Kbytes 页数:7 Pages | DIODES 美台半导体 | DIODES | ||
DMT10H032LFDF | 100V N-CHANNEL ENHANCEMENT MODE MOSFET This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. •0.6mm Profile – Ideal for Low Profile Applications\n•PCB Footprint of 4mm2\n•Low On-Resistance\n•100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application\n•Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)\n•Halogen and Antimony Free. “; | Diodes 美台半导体 | Diodes |
技术参数
- Automotive Compliant PPAP:
No
- Polarity:
N
- ESD Diodes:
N
- VDS:
100 V
- VGS:
20 ±V
- IDS @ TA = +25°C:
6 A
- PD @ TA = +25°C:
1.6 W
- RDS(ON) Max @ VGS (10V):
32 mΩ
- RDS(ON) Max @ VGS (4.5V):
46 mΩ
- RDS(ON) Max @ VGS (2.5V):
N/A mΩ
- RDS(ON) Max @ VGS (1.8V):
N/A mΩ
- VGS (th) Max:
2.5 V
- QG Typ @ VGS = 4.5V (nC):
6.3 nC
- QG Typ @ VGS = 10V (nC):
11.9 nC
- Packages:
U-DFN2020-6
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NK/南科功率 |
2025+ |
DFN22-6L |
986966 |
国产 |
询价 | ||
DIODES/美台 |
23+ |
NA |
12730 |
原装正品代理渠道价格优势 |
询价 | ||
DIODES/美台 |
2511 |
DFN2020-6 |
360000 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
询价 | ||
DIODES/美台 |
24+ |
N/A |
500000 |
美台原厂超低价支持 |
询价 | ||
24+ |
N/A |
57000 |
一级代理-主营优势-实惠价格-不悔选择 |
询价 |
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