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DMT10H032LFDF中文资料100V N-CHANNEL ENHANCEMENT MODE MOSFET数据手册Diodes规格书
DMT10H032LFDF规格书详情
描述 Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
特性 Features
•0.6mm Profile – Ideal for Low Profile Applications
•PCB Footprint of 4mm2
•Low On-Resistance
•100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application
•Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•Halogen and Antimony Free. “Green” Device (Note 3)
•For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAPcapable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/
应用 Application
• Power Management Functions
• Battery Operated Systems and Solid-State Relays
• Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
技术参数
- 制造商编号
：DMT10H032LFDF
- 生产厂家
：Diodes
- Automotive Compliant PPAP
：No
- Polarity
：N
- ESD Diodes
：N
- VDS
：100 V
- VGS
：20 ±V
- IDS @ TA = +25°C
：6 A
- PD @ TA = +25°C
：1.6 W
- RDS(ON) Max @ VGS (10V)
：32 mΩ
- RDS(ON) Max @ VGS (4.5V)
：46 mΩ
- RDS(ON) Max @ VGS (2.5V)
：N/A mΩ
- RDS(ON) Max @ VGS (1.8V)
：N/A mΩ
- VGS (th) Max
：2.5 V
- QG Typ @ VGS = 4.5V (nC)
：6.3 nC
- QG Typ @ VGS = 10V (nC)
：11.9 nC
- Packages
：U-DFN2020-6
