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DMN2025U

N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications. • Backlighting • Power Management Functions • DC-DC Converters • Motor Contro

文件:358.15 Kbytes 页数:8 Pages

DIODES

美台半导体

DMN2025U-7

丝印:05U;Package:SOT23;N-CHANNEL ENHANCEMENT MODE MOSFET

Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications. • Backlighting • Power Management Functions • DC-DC Converters • Motor Contro

文件:358.15 Kbytes 页数:8 Pages

DIODES

美台半导体

DMN2025UFDB

DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive appl

文件:485.69 Kbytes 页数:8 Pages

DIODES

美台半导体

DMN2025UFDB-13

丝印:O5;Package:U-DFN2020-6;DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive appl

文件:485.69 Kbytes 页数:8 Pages

DIODES

美台半导体

DMN2025UFDB-7

丝印:O5;Package:U-DFN2020-6;DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive appl

文件:485.69 Kbytes 页数:8 Pages

DIODES

美台半导体

DMN2025UFDF

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive appl

文件:492.86 Kbytes 页数:8 Pages

DIODES

美台半导体

DMN2025UFDF-13

丝印:5F;Package:U-DFN2020-6;20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive appl

文件:492.86 Kbytes 页数:8 Pages

DIODES

美台半导体

DMN2025UFDF-7

丝印:5F;Package:U-DFN2020-6;20V N-CHANNEL ENHANCEMENT MODE MOSFET

Features  0.6mm Profile – Ideal for Low Profile Applications  PCB Footprint of 4mm2  Low Gate Threshold Voltage  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive appl

文件:492.86 Kbytes 页数:8 Pages

DIODES

美台半导体

DMN2025U

N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications\n\n •Low On-Resistance\n•Fast Switching Speed\n•Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)\n•Halogen and Antimony Free. “Green” Device (Note 3)\n;

Diodes

美台半导体

DMN2025UFDB

mosfets

Diodes

美台半导体

技术参数

  • Automotive Compliant PPAP:

    No

  • Polarity:

    N

  • ESD Diodes:

    Yes Y/N

  • VDS:

    20 V

  • VGS:

    12 ±V

  • IDS @ TA = +25°C:

    5.6 A

  • PD @ TA = +25°C:

    1.3 W

  • RDS(ON) Max @ VGS (10V):

    N/A mΩ

  • RDS(ON) Max @ VGS (4.5V):

    27 mΩ

  • RDS(ON) Max @ VGS (2.5V):

    35 mΩ

  • RDS(ON) Max @ VGS (1.8V):

    65 mΩ

  • VGS(th) Min. (V):

    0.5 V

  • VGS (th) Max:

    0.9 V

  • CISS Typ:

    485 pF

  • CISS Condition [@VDS]:

    10 V

  • QG Typ @ VGS = 4.5V (nC):

    5.9

  • QG Typ @ VGS = 10V (nC):

    N/A nC

  • Packages:

    SOT23

供应商型号品牌批号封装库存备注价格
DIODES/美台
25+
SOT23
20300
DIODES/美台原装特价DMN2025U即刻询购立享优惠#长期有货
询价
Diodes Incorporated
25+
SOT-23-3
6843
样件支持,可原厂排单订货!
询价
Diodes Incorporated
25+
SOT-23-3
6895
正规渠道,免费送样。支持账期,BOM一站式配齐
询价
DIODES/美台
23+
NA
12730
原装正品代理渠道价格优势
询价
DIODES/美台
2447
SOT26
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
DIODES/美台
23+
NA
6000
原装正品假一罚百!可开增票!
询价
DIODES INCORPORATED
/ROHS.original
原封
10000
电子元件,供应 -正纳电子/ 元器件IC -MOS -MCU.
询价
DIODES/美台
22+
UDFN20206
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
询价
达尔
2022+
原厂原包装
6800
全新原装 支持表配单 中国著名电子元器件独立分销
询价
24+
N/A
82000
一级代理-主营优势-实惠价格-不悔选择
询价
更多DMN2025U供应商 更新时间2026-1-20 11:44:00