100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI®

Features • Low RDS(ON) ensures on-state losses are minimized. • Small form factor thermally efficient package enables higher density end products. • Occupies just 33 of the board area occupied by SO-8, enabling smaller end product. • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) •

文件：285.78 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：N12；Package：POWERDI3333-8；100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI®

Features • Low RDS(ON) ensures on-state losses are minimized. • Small form factor thermally efficient package enables higher density end products. • Occupies just 33 of the board area occupied by SO-8, enabling smaller end product. • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) •

文件：285.78 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：N12；Package：POWERDI3333-8；100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI®

Features • Low RDS(ON) ensures on-state losses are minimized. • Small form factor thermally efficient package enables higher density end products. • Occupies just 33 of the board area occupied by SO-8, enabling smaller end product. • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) •

文件：285.78 Kbytes 页数：6 Pages

DIODES

美台半导体

Qualified to AEC-Q101 Standards for High Reliability

文件：265.1 Kbytes 页数：6 Pages

DIODES

美台半导体