IRFI9640GPBF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220FULLPAKeliminatestheneedforadditionalinsulatinghardwareincommercial-industrialapplicat

KRF9640S

HEXFETPowerMOSFET

PE9640

PrecisionBulkhead2.4mmFemaleto2.4mmFemaleAdapter

SC9640P

CDDIGITALSERVOSIGNALPROCESSORWITHMCU(SLAVEMODE)

SFI9640

AdvancedPowerMOSFET

BVDSS=-200V RDS(on)=0.5W ID=-11A FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10mA(Max.)@VDS=-200V ●LowRDS(ON):0.344W(Typ.)

SFP9640

AdvancedPowerMOSFET

BVDSS=-200V RDS(on)=0.5W ID=-11A FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:-10mA(Max.)@VDS=-200V ●LowRDS(ON):0.344W(Typ.)

SFP9640L

AdvancedPowerMOSFET

BVDSS=-200V RDS(on)=0.5Ω ID=-11A FEATURES ❑AvalancheRuggedTechnology ❑RuggedGateOxideTechnology ❑LowerInputCapacitances ❑ImprovedGateCharge ❑ExtendedSafeOperatingArea ❑LowerLeakageCurrent:-10uA(Max.)@VDS=-200V ❑LowerRDS(ON):0.383Ω(Typ.)

SFS9640

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10mA(Max.)@VDS=-200V ■LowRDS(ON):0.344Ω(Typ.)

SFW9640

AdvancedPowerMOSFET

BVDSS=-200V RDS(on)=0.5W ID=-11A FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10mA(Max.)@VDS=-200V ●LowRDS(ON):0.344W(Typ.)

SFWI9640

AdvancedPowerMOSFET