Advanced Power MOSFET

BVDSS = -200 V RDS(on) = 0.5 W ID = -11 A FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : 10 mA (Max.) @ VDS = -200V ● Low RDS(ON) : 0.344 W (Typ.)

文件：263.5 Kbytes 页数：7 Pages

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Advanced Power MOSFET

BVDSS = -200 V RDS(on) = 0.5 W ID= -11 A FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : -10 mA (Max.) @ VDS = -200V ● Low RDS(ON) : 0.344 W (Typ.)

文件：257.269 Kbytes 页数：7 Pages

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仙童半导体

Advanced Power MOSFET

BVDSS = -200 V RDS(on) = 0.5Ω ID = -11 A FEATURES ❑ Avalanche Rugged Technology ❑ Rugged Gate Oxide Technology ❑ Lower Input Capacitances ❑ Improved Gate Charge ❑ Extended Safe Operating Area ❑ Lower Leakage Current : -10uA (Max.) @ VDS= -200V ❑ Lower RDS(ON) : 0.383 Ω (Typ.)

文件：224.23 Kbytes 页数：7 Pages

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仙童半导体

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 mA (Max.) @ VDS = -200V ■ Low RDS(ON) : 0.344 Ω (Typ.)

文件：263.21 Kbytes 页数：7 Pages

FAIRCHILD

仙童半导体