Advanced Power MOSFET

BVDSS = -200 V RDS(on) = 0.5 W ID = -11 A FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : 10 mA (Max.) @ VDS = -200V ● Low RDS(ON) : 0.344 W (Typ.)

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Advanced Power MOSFET

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Advanced Power MOSFET

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1310 nm TX / 1550 nm RX , 3.3V / 2.5 Gbps Single-Fiber SFP Transceiver

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1310 nm TX / 1550 nm RX , 3.3V / 2.5 Gbps Digital Diagnostic Single-Fiber SFP Transceiver

文件：172.12 Kbytes 页数：5 Pages

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