P-Channel Enhancement Mode Power MOSFET

General Description The u ses advanc ed tren ch technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. DMG3130LQ Features VDS -30V ID (at VGS=-10V) -5.0A RDS(ON)

文件：764.68 Kbytes 页数：6 Pages

LEIDITECH

雷卯电子

P-CHANNEL ENHANCEMENT MODE MOSFET

文件：126.18 Kbytes 页数：5 Pages

DIODES

美台半导体

P-CHANNEL ENHANCEMENT MODE MOSFET

文件：606.34 Kbytes 页数：7 Pages

DIODES

美台半导体

P-CHANNEL ENHANCEMENT MODE MOSFET

文件：188.9 Kbytes 页数：2 Pages

ZPSEMIZP Semiconductor

至尚臻品