DMD1012-A

ROHS COMPLIANT METAL GATE RF SILICON FET

DMD1012-A

OBSOLETE Gold metallised multi-purpose silicon DMOS RF FET; •Suitable for broad band applications\n• Simple bias circuits\n• Ultra-low thermal resistance\n• BeO free, Low C(rss)\n• High gain - 13 dB minimum\n;

DMG1012T

N-CHANNELENHANCEMENTMODEMOSFET

N-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note2) •ESDProtectedupto2kV •GreenDevice(Note3) •

DMG1012T

N-Channel20V(D-S)MOSFET

DMG1012UW

N-CHANNELENHANCEMENTMODEMOSFET

N-CHANNELENHANCEMENTMODEMOSFET Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note1) •ESDProtectedUpTo2KV •GreenDevice(Note2) •

DMG1012UW

N-ChannelEnhancementModeMOSFET

DMG1012UWQ

N-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) TheDMG1012UWQissuitablefo

DML1012LDS

SINGLECHANNELSMARTLOADSWITCH

Features LowRDS(ON)–EnsuresOn-StateLossesAreMinimized 0.8VtoVBIAS–1.5VInputVoltageRange 6AContinuousCurrent LowRDS(ON)InternalNFETs 8mΩatVBIAS=5V,VIN=1.05V,TA=+85°C 28μALowQuiescentCurrent 10μsTurnOnRiseTime 3.2Vto5.5VBiasVoltage Int

DMP1012UFDF

12VP-CHANNELENHANCEMENTMODEMOSFET

DMP1012USS

12VP-CHANNELENHANCEMENTMODEMOSFET

FeaturesandBenefits LowOn-Resistance LowInputCapacitance FastSwitchingSpeed TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistance