COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features Low On-Resistance Very Low Gate Threshold Voltage N-Channel: 1.0V Max P-Channel: -1.0V Max Low Input Capacitance Fast Switching Speed Ultra-Small Surface Mount Package 0.8mm  0.6mm ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Fr

文件：563.29 Kbytes 页数：10 Pages

DIODES

美台半导体

丝印：EE；Package：X2-DFN0806-6；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features Low On-Resistance Very Low Gate Threshold Voltage N-Channel: 1.0V Max P-Channel: -1.0V Max Low Input Capacitance Fast Switching Speed Ultra-Small Surface Mount Package 0.8mm  0.6mm ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Fr

文件：563.29 Kbytes 页数：10 Pages

DIODES

美台半导体

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features Low On-Resistance Very Low Gate Threshold Voltage N-Channel: 1.0V Maximum P-Channel: -1.0V Maximum Low Input Capacitance Fast Switching Speed Ultra-Small Surface Mount Package 1mm x 1mm ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimon

文件：886.32 Kbytes 页数：10 Pages

DIODES

美台半导体

丝印：E1；Package：SOT963；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features Low On-Resistance Very Low Gate Threshold Voltage N-Channel: 1.0V Maximum P-Channel: -1.0V Maximum Low Input Capacitance Fast Switching Speed Ultra-Small Surface Mount Package 1mm x 1mm ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimon

文件：886.32 Kbytes 页数：10 Pages

DIODES

美台半导体

丝印：E1；Package：SOT963；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features Low On-Resistance Very Low Gate Threshold Voltage N-Channel: 1.0V Maximum P-Channel: -1.0V Maximum Low Input Capacitance Fast Switching Speed Ultra-Small Surface Mount Package 1mm x 1mm ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimon

文件：886.32 Kbytes 页数：10 Pages

DIODES

美台半导体

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features Low On-Resistance Very Low Gate Threshold Voltage  N-Channel: 1.0V Maximum  P-Channel: -1.0V Maximum Low Input/Output Leakage Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For a

文件：781.07 Kbytes 页数：12 Pages

DIODES

美台半导体

丝印：C2；Package：X2-DFN1010-6；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features Low On-Resistance Very Low Gate Threshold Voltage  N-Channel: 1.0V Maximum  P-Channel: -1.0V Maximum Low Input/Output Leakage Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For a

文件：781.07 Kbytes 页数：12 Pages

DIODES

美台半导体

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capa

文件：277.28 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：C3021LD；Package：SO-8；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair MOSFET Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capa

文件：277.28 Kbytes 页数：8 Pages

DIODES

美台半导体

N&P-Channel Complementary MOSFET

General Features «+ N-Channel © Vos=30V. o=B.0A Rosny =17m0@ Vos=10V Rosco =24m0@Vos=4 5V + P-Channel * Vos=-30V,Ip=-6A Rosn =40mQ @Ves=-10V Rosco =60mQ @Vos=-45V «High Power and current handing capabilly «Lead ree products acquired « Surace Mount Package Application

文件：3.76278 Mbytes 页数：10 Pages

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