COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features Low On-Resistance Very Low Gate Threshold Voltage  N-Channel: 1.0V Maximum  P-Channel: -1.0V Maximum Low Input/Output Leakage Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For a

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DIODES

美台半导体

丝印：C2；Package：X2-DFN1010-6；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features Low On-Resistance Very Low Gate Threshold Voltage  N-Channel: 1.0V Maximum  P-Channel: -1.0V Maximum Low Input/Output Leakage Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For a

文件：781.07 Kbytes 页数：12 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • Low Input/Output Leakage • Fast Switching Speed • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • For automotive applications requiring specific change control (i.e. parts qual

文件：363.02 Kbytes 页数：8 Pages

DIODES

美台半导体

SOIC-8_150mil

DIODES/美台

上传：深圳市纳睿斯电子科技有限公司

SOP8

DIODES

美台半导体

上传：深圳市天芯半导体科技有限公司