COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features Low On-Resistance Very Low Gate Threshold Voltage N-Channel: 1.0V Maximum P-Channel: -1.0V Maximum Low Input Capacitance Fast Switching Speed Ultra-Small Surface Mount Package 1mm x 1mm ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimon

文件：886.32 Kbytes 页数：10 Pages

DIODES

美台半导体

丝印：E1；Package：SOT963；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features Low On-Resistance Very Low Gate Threshold Voltage N-Channel: 1.0V Maximum P-Channel: -1.0V Maximum Low Input Capacitance Fast Switching Speed Ultra-Small Surface Mount Package 1mm x 1mm ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimon

文件：886.32 Kbytes 页数：10 Pages

DIODES

美台半导体

丝印：E1；Package：SOT963；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features Low On-Resistance Very Low Gate Threshold Voltage N-Channel: 1.0V Maximum P-Channel: -1.0V Maximum Low Input Capacitance Fast Switching Speed Ultra-Small Surface Mount Package 1mm x 1mm ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimon

文件：886.32 Kbytes 页数：10 Pages

DIODES

美台半导体

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Diodes

美台半导体