COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Ultra-Small Surface Mount Package 0.8mm x 0.6mm • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen- and Antimony-Free. “Green” Device (Note 3

文件：416.32 Kbytes 页数：10 Pages

DIODES

美台半导体

丝印：B6；Package：X2-DFN0806-6；COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

Features • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Ultra-Small Surface Mount Package 0.8mm x 0.6mm • ESD Protected Gate • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen- and Antimony-Free. “Green” Device (Note 3

文件：416.32 Kbytes 页数：10 Pages

DIODES

美台半导体

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

文件：349.98 Kbytes 页数：9 Pages

DIODES

美台半导体

N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)

文件：575.02 Kbytes 页数：7 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features  Low On-Resistance  Very Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Ultra-Small Surface Mount Package 0.8mm x 0.6mm  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3

文件：512.75 Kbytes 页数：7 Pages

DIODES

美台半导体