COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Low On-Resistance\nLow Input Capacitance\nFast Switching Speed\nLow Input/Output Leakage\nComplementary Pair MOSFET;

Diodes

美台半导体

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

文件：474.27 Kbytes 页数：10 Pages

DIODES

美台半导体

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

文件：569.52 Kbytes 页数：10 Pages

DIODES

美台半导体

30V COMPLEMENTARY ENHANCEMENT MODE MOSFET

文件：350.78 Kbytes 页数：10 Pages

DIODES

美台半导体

N&P-Channel Complementary MOSFET

General Features «+ N-Channel © Vos=30V. o=B.0A Rosny =17m0@ Vos=10V Rosco =24m0@Vos=4 5V + P-Channel * Vos=-30V,Ip=-6A Rosn =40mQ @Ves=-10V Rosco =60mQ @Vos=-45V «High Power and current handing capabilly «Lead ree products acquired « Surace Mount Package Application

文件：3.76278 Mbytes 页数：10 Pages

TECHPUBLIC

台舟电子