首页 >CZT5551TR-LF>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR | DCCOM Dc Components | DCCOM | ||
MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(DMMT5401) •IdealforLowPowerAmplificationandSwitching •IntrinsicallyMatchedNPNPair(Note1) •2MatchedTolerance,hFE,VCE(SAT),VBE(SAT) •LeadFree/RoHSCompliant(Note4) •GreenDevice(Note5an | DIODES Diodes Incorporated | DIODES | ||
MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR | DIODES Diodes Incorporated | DIODES | ||
MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR | DIODES Diodes Incorporated | DIODES | ||
Plastic-EncapsulateTransistors Features •SurfaceMountSOT-363Package •200mWattsofPowerDissipation •IdealforMediumPowerAmplificationandSwitching •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLRating1 •Marking:K4R | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(DMMT5401) •IdealforLowPowerAmplificationandSwitching •IntrinsicallyMatchedNPNPair(Note1) •2MatchedTolerance,hFE,VCE(SAT),VBE(SAT) •LeadFree/RoHSCompliant(Note4) •GreenDevice(Note5an | DIODES Diodes Incorporated | DIODES | ||
MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR | DIODES Diodes Incorporated | DIODES | ||
Plastic-EncapsulateTransistors Features •SurfaceMountSOT-363Package •200mWattsofPowerDissipation •IdealforMediumPowerAmplificationandSwitching •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLRating1 •Marking:K4R | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR Description Designedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages. | DCCOM Dc Components | DCCOM | ||
160VNPNTRANSISTOR | DIODES Diodes Incorporated | DIODES | ||
NPNSURFACEMOUNTTRANSISTOR Features •BVCEO>160V •BVEBO>6V •IC=600mAContinuousCollectorCurrent •LowSaturationVoltage(150mVmax@10mA) •hFEspecifiedupto50mAforahighgainholdup •ComplementaryPNPType:DZT5401 •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnti | DIODES Diodes Incorporated | DIODES | ||
160VNPNVOLTAGETRANSISTORINSOT223 Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>160V •BVEBO>6V •IC=600mAContinuousCollectorCurrent •LowSaturationVoltage(150mVmax@10mA) •hFEspecifiedupto50mAforahighgain | DIODES Diodes Incorporated | DIODES | ||
HighPerformance,LowPowerAtmelAVR8-bitMicrocontrollerAdvancedRISCArchitecture | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 | Atmel | ||
Dual-ChipNPNGeneralPurposeAmplifier | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
Dual-ChipNPNGeneral-PurposeAmplifier | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
NPNGeneralPurposeAmplifierSuperSOT-6SurfaceMountPackage | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
NPNGeneralPurposeAmplifierSuperSOT-6SurfaceMountPackage | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
FAIRCHILDSmallSignalTransistors | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
NPNGeneralPurposeAmplifier | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
NPNGeneral-PurposeAmplifier | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
CENTRAL |
22+ |
SOT223 |
30356 |
原装正品现货 |
询价 | ||
原装CENTRAL |
19+ |
SOT223 |
20000 |
原装现货假一罚十 |
询价 | ||
CENTRAL |
1942+ |
SOT223 |
9852 |
只做原装正品现货或订货!假一赔十! |
询价 | ||
原装CENTRAL |
21+ |
SOT223 |
35200 |
一级代理/放心采购 |
询价 | ||
CEN |
1535+ |
424 |
询价 | ||||
原装CENTRAL |
SOT223 |
68900 |
原包原标签100%进口原装常备现货! |
询价 | |||
原装CENTRAL |
23+ |
SOT223 |
7300 |
专注配单,只做原装进口现货 |
询价 | ||
CENTRAL |
2023+ |
SOT223 |
3872 |
全新原厂原装产品、公司现货销售 |
询价 | ||
原装CENTRAL |
23+ |
SOT223 |
7300 |
专注配单,只做原装进口现货 |
询价 | ||
CEN |
23+ |
424 |
全新原装,欢迎来电咨询 |
询价 |
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