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DMBT5551

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

DCCOM

Dc Components

DMMT5551

MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(DMMT5401) •IdealforLowPowerAmplificationandSwitching •IntrinsicallyMatchedNPNPair(Note1) •2MatchedTolerance,hFE,VCE(SAT),VBE(SAT) •LeadFree/RoHSCompliant(Note4) •GreenDevice(Note5an

DIODES

Diodes Incorporated

DMMT5551

MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODES

Diodes Incorporated

DMMT5551

MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODES

Diodes Incorporated

DMMT5551

Plastic-EncapsulateTransistors

Features •SurfaceMountSOT-363Package •200mWattsofPowerDissipation •IdealforMediumPowerAmplificationandSwitching •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLRating1 •Marking:K4R

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

DMMT5551S

MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(DMMT5401) •IdealforLowPowerAmplificationandSwitching •IntrinsicallyMatchedNPNPair(Note1) •2MatchedTolerance,hFE,VCE(SAT),VBE(SAT) •LeadFree/RoHSCompliant(Note4) •GreenDevice(Note5an

DIODES

Diodes Incorporated

DMMT5551S

MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODES

Diodes Incorporated

DMMT5551-TP

Plastic-EncapsulateTransistors

Features •SurfaceMountSOT-363Package •200mWattsofPowerDissipation •IdealforMediumPowerAmplificationandSwitching •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLRating1 •Marking:K4R

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

DXT5551

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

Description Designedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages.

DCCOM

Dc Components

DXT5551

160VNPNTRANSISTOR

DIODES

Diodes Incorporated

DZT5551

NPNSURFACEMOUNTTRANSISTOR

Features •BVCEO>160V •BVEBO>6V •IC=600mAContinuousCollectorCurrent •LowSaturationVoltage(150mVmax@10mA) •hFEspecifiedupto50mAforahighgainholdup •ComplementaryPNPType:DZT5401 •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnti

DIODES

Diodes Incorporated

DZT5551Q

160VNPNVOLTAGETRANSISTORINSOT223

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>160V •BVEBO>6V •IC=600mAContinuousCollectorCurrent •LowSaturationVoltage(150mVmax@10mA) •hFEspecifiedupto50mAforahighgain

DIODES

Diodes Incorporated

E5551

HighPerformance,LowPowerAtmelAVR8-bitMicrocontrollerAdvancedRISCArchitecture

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

FFB5551

Dual-ChipNPNGeneralPurposeAmplifier

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FFB5551

Dual-ChipNPNGeneral-PurposeAmplifier

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FMB5551

NPNGeneralPurposeAmplifierSuperSOT-6SurfaceMountPackage

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FMB5551

NPNGeneralPurposeAmplifierSuperSOT-6SurfaceMountPackage

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FMB5551

FAIRCHILDSmallSignalTransistors

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FMBM5551

NPNGeneralPurposeAmplifier

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FMBM5551

NPNGeneral-PurposeAmplifier

ONSEMION Semiconductor

安森美半导体安森美半导体公司

供应商型号品牌批号封装库存备注价格
CENTRAL
22+
SOT223
30356
原装正品现货
询价
原装CENTRAL
19+
SOT223
20000
原装现货假一罚十
询价
CENTRAL
1942+
SOT223
9852
只做原装正品现货或订货!假一赔十!
询价
原装CENTRAL
21+
SOT223
35200
一级代理/放心采购
询价
CEN
1535+
424
询价
原装CENTRAL
SOT223
68900
原包原标签100%进口原装常备现货!
询价
原装CENTRAL
23+
SOT223
7300
专注配单,只做原装进口现货
询价
CENTRAL
2023+
SOT223
3872
全新原厂原装产品、公司现货销售
询价
原装CENTRAL
23+
SOT223
7300
专注配单,只做原装进口现货
询价
CEN
23+
424
全新原装,欢迎来电咨询
询价
更多CZT5551TR-LF供应商 更新时间2024-9-21 10:50:00