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DMBT5551

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

DCCOM

Dc Components

DMMT5551

MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(DMMT5401) •IdealforLowPowerAmplificationandSwitching •IntrinsicallyMatchedNPNPair(Note1) •2MatchedTolerance,hFE,VCE(SAT),VBE(SAT) •LeadFree/RoHSCompliant(Note4) •GreenDevice(Note5an

DIODES

Diodes Incorporated

DMMT5551

MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODES

Diodes Incorporated

DMMT5551

MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODES

Diodes Incorporated

DMMT5551

Plastic-EncapsulateTransistors

Features •SurfaceMountSOT-363Package •200mWattsofPowerDissipation •IdealforMediumPowerAmplificationandSwitching •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLRating1 •Marking:K4R

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

DMMT5551S

MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

Features •EpitaxialPlanarDieConstruction •ComplementaryPNPTypeAvailable(DMMT5401) •IdealforLowPowerAmplificationandSwitching •IntrinsicallyMatchedNPNPair(Note1) •2MatchedTolerance,hFE,VCE(SAT),VBE(SAT) •LeadFree/RoHSCompliant(Note4) •GreenDevice(Note5an

DIODES

Diodes Incorporated

DMMT5551S

MATCHEDNPNSMALLSIGNALSURFACEMOUNTTRANSISTOR

DIODES

Diodes Incorporated

DMMT5551-TP

Plastic-EncapsulateTransistors

Features •SurfaceMountSOT-363Package •200mWattsofPowerDissipation •IdealforMediumPowerAmplificationandSwitching •CaseMaterial:MoldedPlastic.ULFlammabilityClassificationRating94V-0andMSLRating1 •Marking:K4R

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

DXT5551

TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR

Description Designedforgeneralpurposeapplicationsrequiringhighbreakdownvoltages.

DCCOM

Dc Components

DXT5551

160VNPNTRANSISTOR

DIODES

Diodes Incorporated

DZT5551

NPNSURFACEMOUNTTRANSISTOR

Features •BVCEO>160V •BVEBO>6V •IC=600mAContinuousCollectorCurrent •LowSaturationVoltage(150mVmax@10mA) •hFEspecifiedupto50mAforahighgainholdup •ComplementaryPNPType:DZT5401 •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnti

DIODES

Diodes Incorporated

DZT5551Q

160VNPNVOLTAGETRANSISTORINSOT223

Description ThisBipolarJunctionTransistor(BJT)isdesignedtomeetthestringentrequirementsofAutomotiveApplications. Features •BVCEO>160V •BVEBO>6V •IC=600mAContinuousCollectorCurrent •LowSaturationVoltage(150mVmax@10mA) •hFEspecifiedupto50mAforahighgain

DIODES

Diodes Incorporated

E5551

HighPerformance,LowPowerAtmelAVR8-bitMicrocontrollerAdvancedRISCArchitecture

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

FFB5551

Dual-ChipNPNGeneralPurposeAmplifier

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FFB5551

Dual-ChipNPNGeneral-PurposeAmplifier

ONSEMION Semiconductor

安森美半导体安森美半导体公司

FMB5551

NPNGeneralPurposeAmplifierSuperSOT-6SurfaceMountPackage

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FMB5551

NPNGeneralPurposeAmplifierSuperSOT-6SurfaceMountPackage

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FMB5551

FAIRCHILDSmallSignalTransistors

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FMBM5551

NPNGeneralPurposeAmplifier

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FMBM5551

NPNGeneral-PurposeAmplifier

ONSEMION Semiconductor

安森美半导体安森美半导体公司

供应商型号品牌批号封装库存备注价格
CENTRAL
23+
SOT223
8650
受权代理!全新原装现货特价热卖!
询价
CYPRESS
20+
2500
全新现货热卖中欢迎查询
询价
CENTRAL
2023+
SMD
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
CENTRAL
23+
SMD
5000
专注配单,只做原装进口现货
询价
CENTRAL
23+
SMD
5000
专注配单,只做原装进口现货
询价
CJ/长电
23+
SOT-223
90000
只做原厂渠道价格优势可提供技术支持
询价
CJ/长电
23+
SOT-223
50000
全新原装正品现货,支持订货
询价
CJ/长电
22+
SOT-223
20000
硅原只售全新原装,提供技术支持!
询价
CJ/长电
22+
SOT-223
67804
郑重承诺只做原装进口现货
询价
CJ/长电
22+
DWN0603-2L
37500
只做原装进口现货
询价
更多CZT5551IC供应商 更新时间2024-9-21 11:45:00