丝印：CSD87501；Package：PICOSTAR；CSD87501L 30-V Dual Common Drain N-Channel NexFET™ Power MOSFET

1 Features 1• Low on-resistance • Small footprint of 3.37 mm × 1.47 mm • Ultra-low profile – 0.2-mm high • Lead free • RoHS compliant • Halogen free • Gate ESD protection 2 Applications • Battery management • Battery protection • USB Type-C / PD 3 Description This 30-V, 6.6-mΩ, 3.

文件：1.03668 Mbytes 页数：13 Pages

TI

德州仪器

CSD87501L 30 V Dual Common Drain N-Channel NexFET Power MOSFET

文件：896.01 Kbytes 页数：12 Pages

TI

德州仪器

丝印：CSD87501；Package：PICOSTAR；CSD87501L 30-V Dual Common Drain N-Channel NexFET™ Power MOSFET

1 Features 1• Low on-resistance • Small footprint of 3.37 mm × 1.47 mm • Ultra-low profile – 0.2-mm high • Lead free • RoHS compliant • Halogen free • Gate ESD protection 2 Applications • Battery management • Battery protection • USB Type-C / PD 3 Description This 30-V, 6.6-mΩ, 3.

文件：1.03668 Mbytes 页数：13 Pages

TI

德州仪器

CSD87501L 30-V Dual Common Drain N-Channel NexFET™ Power MOSFET

1 Features 1• Low on-resistance • Small footprint of 3.37 mm × 1.47 mm • Ultra-low profile – 0.2-mm high • Lead free • RoHS compliant • Halogen free • Gate ESD protection 2 Applications • Battery management • Battery protection • USB Type-C / PD 3 Description This 30-V, 6.6-mΩ, 3.

文件：1.03668 Mbytes 页数：13 Pages

TI

德州仪器

CSD87501L 30 V Dual Common Drain N-Channel NexFET Power MOSFET

文件：896.01 Kbytes 页数：12 Pages

TI

德州仪器

CSD87501L 30-V Dual Common Drain N-Channel NexFET™ Power MOSFET

1 Features 1• Low on-resistance • Small footprint of 3.37 mm × 1.47 mm • Ultra-low profile – 0.2-mm high • Lead free • RoHS compliant • Halogen free • Gate ESD protection 2 Applications • Battery management • Battery protection • USB Type-C / PD 3 Description This 30-V, 6.6-mΩ, 3.

文件：1.03668 Mbytes 页数：13 Pages

TI

德州仪器