CSD87501L.B中文资料德州仪器数据手册PDF规格书

1 Features

1• Low on-resistance

• Small footprint of 3.37 mm × 1.47 mm

• Ultra-low profile – 0.2-mm high

• Lead free

• RoHS compliant

• Halogen free

• Gate ESD protection

2 Applications

• Battery management

• Battery protection

• USB Type-C / PD

3 Description

This 30-V, 6.6-mΩ, 3.37-mm × 1.47-mm LGA Dual

NexFET™ power MOSFET is designed to minimize

resistance and gate charge in a small footprint. Its

small size and common drain configuration make the

device ideal for multi-cell battery pack applications

and small handheld devices.