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CSD85312Q3E中文资料德州仪器数据手册PDF规格书
CSD85312Q3E规格书详情
1FEATURES
• Common Source Connection
• Low Drain to Drain On-Resistance
• Space Saving SON 3.3 x 3.3 mm Plastic
Package
• Optimized for 5 V Gate Drive
• Low Thermal Resistance
• Avalanche Rated
• Pb-Free Terminal Plating
• RoHS Compliant
• Halogen Free
APPLICATIONS
• Adaptor or USB Input Protection for Notebook
PCs and Tablets
DESCRIPTION
The CSD85312Q3E is a 20 V common-source, dual
N-channel device designed for adaptor or USB input
protection. This SON 3.3 x 3.3 mm device has low
drain to drain on-resistance that minimizes losses and
offers low component count for space constrained
multi-cell battery charging applications.
产品属性
- 型号：
CSD85312Q3E
- 制造商：
Texas Instruments
- 功能描述：
MOSFET N-CH 20V 8VSON
- 功能描述：
DISCREET - DUAL-DRAIN FET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
TI/德州仪器 |
24+ |
NA/ |
5608 |
原装现货,当天可交货,原型号开票 |
询价 | ||
TI |
24+ |
VSON|8 |
684100 |
免费送样原盒原包现货一手渠道联系 |
询价 | ||
TI/德州仪器 |
24+ |
VSON-8 |
2500 |
原包原盘正品现货,假一赔十,放心购买 |
询价 | ||
TI(德州仪器) |
24+ |
VSON-8(3 |
9555 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
TI |
2025+ |
VSON-8 FET |
16000 |
原装优势绝对有货 |
询价 | ||
TI/德州仪器 |
24+ |
SON3X3 |
47186 |
郑重承诺只做原装进口现货 |
询价 | ||
TI |
23+ |
NA |
20000 |
询价 | |||
TI/德州仪器 |
2450+ |
VSON(DPA)8 |
9850 |
只做原厂原装正品现货或订货假一赔十! |
询价 | ||
TI/德州仪器 |
25+ |
VSON-8 |
860000 |
明嘉莱只做原装正品现货 |
询价 | ||
TI/德州仪器 |
24+ |
VSON-8 |
9600 |
原装现货,优势供应,支持实单! |
询价 |
