CSD85301Q2.B中文资料德州仪器数据手册PDF规格书

厂商型号	CSD85301Q2.B
功能描述	CSD85301Q2 20V Dual N-Channel NexFET™ Power MOSFETs
丝印标识	8531
封装外壳	WSON
文件大小	1.20394 Mbytes
页面数量	15 页
生产厂商	TI
中文名称	德州仪器
网址	网址
数据手册	下载地址一下载地址二到原厂下载
更新时间	2025-10-7 23:00:00
人工找货	CSD85301Q2.B价格和库存，欢迎联系客服免费人工找货

1 Features

• Low on-resistance

• Dual independent MOSFETs

• Space saving SON 2mm × 2mm plastic package

• Optimized for 5V gate driver

• Avalanche rated

• Pb and halogen free

• RoHS compliant

2 Applications

• Point-of-load synchronous buck converter for

applications in networking, telecom, and

computing systems

• Adaptor or USB input protection for notebook PCs

and tablets

• Battery protection

3 Description

The CSD85301Q2 is a 20V, 23mΩ N-Channel

device with dual independent MOSFETs in a SON

2mm x 2mm plastic package. The two FETs were

designed to be used in a half bridge configuration

for synchronous buck and other power supply

applications. Additionally, this part can be used for

adaptor, USB input protection and battery charging

applications. The dual FETs feature low drain to

source on-resistance that minimizes losses and

offers low component count for space constrained

applications.