Broadband RF power GaN HEMT

General description CLF1G0035-50 and CLF1G0035S-50 are broadband general purpose 50 W amplifiers with first generation GaN HEMT technology from Ampleon. Frequency of operation is from DC to 3.5 GHz. Features and benefits  Frequency of operation is from DC to 3.5 GHz  50 W general purpose b

文件：1.70272 Mbytes 页数：19 Pages

Ampleon

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RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Broadband RF power GaN HEMT

General description CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from Ampleon. Frequency of operation is from DC to 3.5 GHz. Features and benefits  Frequency of operation is from DC to 3.5 GHz  100 W general purpo

文件：1.74588 Mbytes 页数：20 Pages

Ampleon

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Broadband RF power GaN HEMT

General description The CLF1G0035-100P and CLF1G0035S-100P are 100 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz. Features and benefits  Frequency of operation is from DC to 3.5 GHz  100 W general purpose broadband RF Power GaN HEMT  Excellent ruggedness (VSWR = 10 : 1)

文件：1.46696 Mbytes 页数：16 Pages

Ampleon

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Broadband RF power GaN HEMT

General description The CLF1G0035-200P and CLF1G0035S-200P are 200 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz. Features and benefits  Frequency of operation is from DC to 3.5 GHz  200 W general purpose broadband RF Power GaN HEMT  Excellent ruggedness (VSWR = 10 : 1)

文件：1.85235 Mbytes 页数：19 Pages

Ampleon

安谱隆

Broadband RF power GaN HEMT

General description CLF1G0035-50 and CLF1G0035S-50 are broadband general purpose 50 W amplifiers with first generation GaN HEMT technology from Ampleon. Frequency of operation is from DC to 3.5 GHz. Features and benefits  Frequency of operation is from DC to 3.5 GHz  50 W general purpose b

文件：1.70272 Mbytes 页数：19 Pages

Ampleon

安谱隆

Broadband RF power GaN HEMT

General description The CLF1G0060-10 and CLF1G0060S-10 are 10 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Features and benefits  Frequency of operation is from DC to 6.0 GHz  10 W general purpose broadband RF Power GaN HEMT  Excellent ruggedness (VSWR = 10 : 1)  Hig

文件：1.63098 Mbytes 页数：18 Pages

Ampleon

安谱隆

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Broadband RF power GaN HEMT

General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Features and benefits  Frequency of operation is from DC to 6.0 GHz  30 W general purpose broadband RF Power GaN HEMT  Excellent ruggedness (VSWR = 10 : 1)  Hig

文件：1.7181 Mbytes 页数：19 Pages

Ampleon

安谱隆