RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

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Broadband RF power GaN HEMT

General description CLF1G0035-50 and CLF1G0035S-50 are broadband general purpose 50 W amplifiers with first generation GaN HEMT technology from Ampleon. Frequency of operation is from DC to 3.5 GHz. Features and benefits  Frequency of operation is from DC to 3.5 GHz  50 W general purpose b

文件：1.70272 Mbytes 页数：19 Pages

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Broadband RF power GaN HEMT

General description CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from Ampleon. Frequency of operation is from DC to 3.5 GHz. Features and benefits  Frequency of operation is from DC to 3.5 GHz  100 W general purpo

文件：1.74588 Mbytes 页数：20 Pages

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Broadband RF power GaN HEMT

General description The CLF1G0035-100P and CLF1G0035S-100P are 100 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz. Features and benefits  Frequency of operation is from DC to 3.5 GHz  100 W general purpose broadband RF Power GaN HEMT  Excellent ruggedness (VSWR = 10 : 1)

文件：1.46696 Mbytes 页数：16 Pages

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Broadband RF power GaN HEMT

General description The CLF1G0035-200P and CLF1G0035S-200P are 200 W general purpose broadband GaN HEMTs usable from DC to 3.5 GHz. Features and benefits  Frequency of operation is from DC to 3.5 GHz  200 W general purpose broadband RF Power GaN HEMT  Excellent ruggedness (VSWR = 10 : 1)

文件：1.85235 Mbytes 页数：19 Pages

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Broadband RF power GaN HEMT

General description CLF1G0035-50 and CLF1G0035S-50 are broadband general purpose 50 W amplifiers with first generation GaN HEMT technology from Ampleon. Frequency of operation is from DC to 3.5 GHz. Features and benefits  Frequency of operation is from DC to 3.5 GHz  50 W general purpose b

文件：1.70272 Mbytes 页数：19 Pages

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Broadband RF power GaN HEMT

General description The CLF1G0060-10 and CLF1G0060S-10 are 10 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Features and benefits  Frequency of operation is from DC to 6.0 GHz  10 W general purpose broadband RF Power GaN HEMT  Excellent ruggedness (VSWR = 10 : 1)  Hig

文件：1.63098 Mbytes 页数：18 Pages

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RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

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Broadband RF power GaN HEMT

General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Features and benefits  Frequency of operation is from DC to 6.0 GHz  30 W general purpose broadband RF Power GaN HEMT  Excellent ruggedness (VSWR = 10 : 1)  Hig

文件：1.7181 Mbytes 页数：19 Pages

AMPLEON

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RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP