RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Broadband RF power GaN HEMT

General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Features and benefits  Frequency of operation is from DC to 6.0 GHz  30 W general purpose broadband RF Power GaN HEMT  Excellent ruggedness (VSWR = 10 : 1)  Hig

文件：1.7181 Mbytes 页数：19 Pages

Ampleon

安谱隆

Broadband RF power GaN HEMT

CLF1G0060-30 and CLF1G0060S-30 are broadband general purpose 30 W amplifiers with first generation GaN HEMT technology from Ampleon. Frequency of operation is from DC to 6.0 GHz. • Frequency of operation is from DC to 6.0 GHz\n• 30 W general purpose broadband RF Power GaN HEMT\n• Excellent ruggedness (VSWR = 10 : 1)\n• High voltage operation (50 V)\n• Thermally enhanced package;

Ampleon

安谱隆

SMD

minicircuits

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转接器

CERNEX

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