RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

Broadband RF power GaN HEMT

General description The CLF1G0060-10 and CLF1G0060S-10 are 10 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Features and benefits  Frequency of operation is from DC to 6.0 GHz  10 W general purpose broadband RF Power GaN HEMT  Excellent ruggedness (VSWR = 10 : 1)  Hig

文件：1.63098 Mbytes 页数：18 Pages

Ampleon

安谱隆

Broadband RF power GaN HEMT

The CLF1G0060-10 and CLF1G0060S-10 are 10W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. • Frequency of operation is from DC to 6.0 GHz\n• 10 W general purpose broadband RF Power GaN HEMT\n• Excellent ruggedness (VSWR = 10 : 1)\n• High voltage operation (50 V)\n• Thermally enhanced package;

Ampleon

安谱隆

Package：SOT-1227A；包装：托盘 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：RF FET HEMT 150V 14.5DB SOT1227A

Ampleon

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