CLF1G0035S-100P分立半导体产品的晶体管-FETMOSFET-射频规格书PDF中文资料

CLF1G0035S-100P属于分立半导体产品的晶体管-FETMOSFET-射频。由安谱隆制造生产的CLF1G0035S-100P晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。

General description

The CLF1G0035-100P and CLF1G0035S-100P are 100 W general purpose broadband

GaN HEMTs usable from DC to 3.5 GHz.

Features and benefits

 Frequency of operation is from DC to 3.5 GHz

 100 W general purpose broadband RF Power GaN HEMT

 Excellent ruggedness (VSWR = 10 : 1)

 High voltage operation (50 V)

 Thermally enhanced package

Applications

 Commercial wireless infrastructure

(cellular, WiMAX)

 Industrial, scientific, medical

 Radar  Jammers

 Broadband general purpose amplifier  EMC testing

 Public mobile radios  Defense application