Broadband RF power GaN HEMT

General description The CLF1G0060-10 and CLF1G0060S-10 are 10 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Features and benefits  Frequency of operation is from DC to 6.0 GHz  10 W general purpose broadband RF Power GaN HEMT  Excellent ruggedness (VSWR = 10 : 1)  Hig

文件：1.63098 Mbytes 页数：18 Pages

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Broadband RF power GaN HEMT

General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Features and benefits  Frequency of operation is from DC to 6.0 GHz  30 W general purpose broadband RF Power GaN HEMT  Excellent ruggedness (VSWR = 10 : 1)  Hig

文件：1.7181 Mbytes 页数：19 Pages

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Broadband RF power GaN HEMT

General description The CLF3H0035-100 and CLF3H0035S-100 are 100 W general purpose, unmatched broadband GaN HEMT transistors that are usable in the frequency range from DC to 3.5 GHz. The device utilizes a thermally enhanced package which supports both CW and pulsed applications. Features and

文件：1.5052 Mbytes 页数：12 Pages

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Broadband RF power GaN HEMT

General description The CLF3H0035-100 and CLF3H0035S-100 are 100 W general purpose, unmatched broadband GaN HEMT transistors that are usable in the frequency range from DC to 3.5 GHz. The device utilizes a thermally enhanced package which supports both CW and pulsed applications. Features and

文件：1.5052 Mbytes 页数：12 Pages

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Broadband RF power GaN HEMT

General description The CLF3H0035-100 and CLF3H0035S-100 are 100 W general purpose, unmatched broadband GaN HEMT transistors that are usable in the frequency range from DC to 3.5 GHz. The device utilizes a thermally enhanced package which supports both CW and pulsed applications. Features and

文件：1.5052 Mbytes 页数：12 Pages

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Broadband RF power GaN HEMT

General description The CLF3H0060-30 and CLF3H0060S-30 are 30 W general purpose, unmatched broadband GaN-SiC HEMT transistors that are usable in the frequency range from DC to 6.0 GHz. The device utilizes a thermally enhanced package which supports both CW and pulsed applications. Features an

文件：2.21906 Mbytes 页数：29 Pages

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Broadband RF power GaN HEMT

General description The CLF3H0060-30 and CLF3H0060S-30 are 30 W general purpose, unmatched broadband GaN-SiC HEMT transistors that are usable in the frequency range from DC to 6.0 GHz. The device utilizes a thermally enhanced package which supports both CW and pulsed applications. Features an

文件：2.21906 Mbytes 页数：29 Pages

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安谱隆

Broadband RF power GaN HEMT

General description The CLF3H0060-30 and CLF3H0060S-30 are 30 W general purpose, unmatched broadband GaN-SiC HEMT transistors that are usable in the frequency range from DC to 6.0 GHz. The device utilizes a thermally enhanced package which supports both CW and pulsed applications. Features an

文件：2.21906 Mbytes 页数：29 Pages

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Inductors for Power Circuits Wound Ferrite

FEATURES Magnetic shield type wound inductor for power circuits. It can be used at a wide temperature range. –55～+150°C（ Including self-temperature rise) 1 to 470μH, wide E-6 Series lineup allows for various usages. APPLICATION Equipment used for automobiles (ECM, airbags, headl

文件：147.98 Kbytes 页数：9 Pages

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Inductors for Power Circuits Wound Ferrite

FEATURES Magnetic shield type wound inductor for power circuits. It can be used at a wide temperature range. –55～+150°C（ Including self-temperature rise) 1 to 470μH, wide E-6 Series lineup allows for various usages. APPLICATION Equipment used for automobiles (ECM, airbags, headl

文件：147.98 Kbytes 页数：9 Pages

TDK

东电化