Broadband RF power GaN HEMT

General description The CLF1G0060-10 and CLF1G0060S-10 are 10 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Features and benefits  Frequency of operation is from DC to 6.0 GHz  10 W general purpose broadband RF Power GaN HEMT  Excellent ruggedness (VSWR = 10 : 1)  Hig

文件：1.63098 Mbytes 页数：18 Pages

Ampleon

安谱隆

Broadband RF power GaN HEMT

General description The CLF1G0060-30 and CLF1G0060S-30 are 30 W general purpose broadband GaN HEMTs usable from DC to 6.0 GHz. Features and benefits  Frequency of operation is from DC to 6.0 GHz  30 W general purpose broadband RF Power GaN HEMT  Excellent ruggedness (VSWR = 10 : 1)  Hig

文件：1.7181 Mbytes 页数：19 Pages

Ampleon

安谱隆

Broadband RF power GaN HEMT

General description The CLF3H0035-100 and CLF3H0035S-100 are 100 W general purpose, unmatched broadband GaN HEMT transistors that are usable in the frequency range from DC to 3.5 GHz. The device utilizes a thermally enhanced package which supports both CW and pulsed applications. Features and

文件：1.5052 Mbytes 页数：12 Pages

Ampleon

安谱隆

Broadband RF power GaN HEMT

General description The CLF3H0035-100 and CLF3H0035S-100 are 100 W general purpose, unmatched broadband GaN HEMT transistors that are usable in the frequency range from DC to 3.5 GHz. The device utilizes a thermally enhanced package which supports both CW and pulsed applications. Features and

文件：1.5052 Mbytes 页数：12 Pages

Ampleon

安谱隆

Broadband RF power GaN HEMT

General description The CLF3H0035-100 and CLF3H0035S-100 are 100 W general purpose, unmatched broadband GaN HEMT transistors that are usable in the frequency range from DC to 3.5 GHz. The device utilizes a thermally enhanced package which supports both CW and pulsed applications. Features and

文件：1.5052 Mbytes 页数：12 Pages

Ampleon

安谱隆

Broadband RF power GaN HEMT

General description The CLF3H0060-30 and CLF3H0060S-30 are 30 W general purpose, unmatched broadband GaN-SiC HEMT transistors that are usable in the frequency range from DC to 6.0 GHz. The device utilizes a thermally enhanced package which supports both CW and pulsed applications. Features an

文件：2.21906 Mbytes 页数：29 Pages

Ampleon

安谱隆

Broadband RF power GaN HEMT

General description The CLF3H0060-30 and CLF3H0060S-30 are 30 W general purpose, unmatched broadband GaN-SiC HEMT transistors that are usable in the frequency range from DC to 6.0 GHz. The device utilizes a thermally enhanced package which supports both CW and pulsed applications. Features an

文件：2.21906 Mbytes 页数：29 Pages

Ampleon

安谱隆

Broadband RF power GaN HEMT

General description The CLF3H0060-30 and CLF3H0060S-30 are 30 W general purpose, unmatched broadband GaN-SiC HEMT transistors that are usable in the frequency range from DC to 6.0 GHz. The device utilizes a thermally enhanced package which supports both CW and pulsed applications. Features an

文件：2.21906 Mbytes 页数：29 Pages

Ampleon

安谱隆

Inductors for Power Circuits Wound Ferrite

FEATURES Magnetic shield type wound inductor for power circuits. It can be used at a wide temperature range. –55～+150°C（ Including self-temperature rise) 1 to 470μH, wide E-6 Series lineup allows for various usages. APPLICATION Equipment used for automobiles (ECM, airbags, headl

文件：147.98 Kbytes 页数：9 Pages

TDK

东电化

Inductors for Power Circuits Wound Ferrite

FEATURES Magnetic shield type wound inductor for power circuits. It can be used at a wide temperature range. –55～+150°C（ Including self-temperature rise) 1 to 470μH, wide E-6 Series lineup allows for various usages. APPLICATION Equipment used for automobiles (ECM, airbags, headl

文件：147.98 Kbytes 页数：9 Pages

TDK

东电化