General description

The CLF3H0060-30 and CLF3H0060S-30 are 30 W general purpose, unmatched

broadband GaN-SiC HEMT transistors that are usable in the frequency range from DC to

6.0 GHz. The device utilizes a thermally enhanced package which supports both CW and

pulsed applications.

Features and benefits

 30 W general purpose broadband RF power GaN HEMT

 High efficiency

 Low thermal resistance

 Excellent ruggedness

 Designed for broadband operation in the frequency range from DC to 6.0 GHz

 For RoHS compliance see the product details on the Ampleon website

 Large signal models in ADS and MWO are available on the Ampleon website

CLF3H0060S-30U属于分立半导体产品 > 晶体管 - FET，MOSFET - 射频。安谱隆半导体（合肥）有限公司制造生产的CLF3H0060S-30U晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。