首页 >CJP80N03>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

NP80N03ELE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NP80N03KDE

ProductScoutAutomotive

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP80N03KDE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •ChannelTemperature175degreerated •SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NP80N03KDE

MOSFIELDEFFECTTRANSISTOR

FEATURES •ChannelTemperature175degreerated •SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID=40A) RDS(on)3=11mΩMAX.(VGS=4.5V,ID=40A) •Lowinputcapacitance Ciss=2600pFTYP.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP80N03KLE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES •ChannelTemperature175degreerated •SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID=40A) RDS(on)3=11mΩMAX.(VGS=4.5V,ID=40A) •Lowinputcapacitance Ciss=26

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP80N03KLE

SWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •ChannelTemperature175degreerated •SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NP80N03KLE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NP80N03KLE

ProductScoutAutomotive

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP80N03MDE

ProductScoutAutomotive

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP80N03MDE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •ChannelTemperature175degreerated •SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NP80N03MDE

MOSFIELDEFFECTTRANSISTOR

FEATURES •ChannelTemperature175degreerated •SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID=40A) RDS(on)3=11mΩMAX.(VGS=4.5V,ID=40A) •Lowinputcapacitance Ciss=2600pFTYP.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP80N03MLE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES •ChannelTemperature175degreerated •SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID=40A) RDS(on)3=11mΩMAX.(VGS=4.5V,ID=40A) •Lowinputcapacitance Ciss=26

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP80N03MLE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NP80N03MLE

ProductScoutAutomotive

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP80N03NDE

MOSFIELDEFFECTTRANSISTOR

FEATURES •ChannelTemperature175degreerated •SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID=40A) RDS(on)3=11mΩMAX.(VGS=4.5V,ID=40A) •Lowinputcapacitance Ciss=2600pFTYP.

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP80N03NDE

ProductScoutAutomotive

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP80N03NDE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

DESCRIPTION TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. FEATURES •ChannelTemperature175degreerated •SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NP80N03NLE

MOSFIELDEFFECTTRANSISTORSWITCHINGN-CHANNELPOWERMOSFET

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NP80N03NLE

ProductScoutAutomotive

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP80N03NLE

MOSFIELDEFFECTTRANSISTOR

SWITCHING N-CHANNELPOWERMOSFET FEATURES •ChannelTemperature175degreerated •SuperLowon-stateResistance RDS(on)1=7.0mΩMAX.(VGS=10V,ID=40A) RDS(on)2=9.0mΩMAX.(VGS=5V,ID=40A) RDS(on)3=11mΩMAX.(VGS=4.5V,ID=40A) •Lowinputcapacitance Ciss=26

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

供应商型号品牌批号封装库存备注价格
CJ/长电
2022+
TO-220
2000
原厂代理 终端免费提供样品
询价
CJ/长电
2022+
TO-220
30000
进口原装现货供应,原装 假一罚十
询价
CJ-长电
24+25+/26+27+
TO-220-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
CJ/长电
20+
TO-220
300000
现货很近!原厂很远!只做原装
询价
长晶科技
21+
TO-220-3L
20
全新原装鄙视假货15118075546
询价
长电
2017+
TO-220-3L-C
8150
全新原装正品现货/长期大量供货!!
询价
23+
N/A
90550
正品授权货源可靠
询价
CJ/长电
2021+
TO-220-3L
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
CJ/长电
23+
TO-220
50000
全新原装正品现货,支持订货
询价
CJ/长电
2022
TO-220
80000
原装现货,OEM渠道,欢迎咨询
询价
更多CJP80N03供应商 更新时间2024-5-20 14:02:00