N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 69A, RDS(ON) = 9.8mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 13mW @V GS = 4.5V.

文件：935.98 Kbytes 页数：5 Pages

CET-MOS

华瑞

SURFCOIL SMT INDUCTORS

文件：135.45 Kbytes 页数：12 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

SURFCOIL SMT INDUCTORS

文件：135.45 Kbytes 页数：12 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM68N10Q uses advanced trench technology and design to provide excellent RDS(ON) with

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ADV

爱德微

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 69A, RDS(ON) = 9.8mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 13mW @V GS = 4.5V.

文件：935.98 Kbytes 页数：5 Pages

CET-MOS

华瑞