| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
CEP90N15 | N-Channel Enhancement Mode Field Effect Transistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-ChannelEnhancementModeFieldEffectTransistor FEATURES SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | CET-MOS | ||
N-Ch150VFastSwitchingMOSFETs GeneralDescription AdvancedTrenchMOSTechnology LowGateCharge LowRDS(ON) 100EASGuaranteed GreenDeviceAvailable Applications LoadSwitch LEDApplications NetworkingApplications QuickCharger | FETEKFETek Technology Corp. 台灣東沅公司 東沅科技股份有限公司 | FETEK | ||
N-Ch150VFastSwitchingMOSFETs GeneralDescription ⚫AdvancedTrenchMOSTechnology ⚫LowGateCharge ⚫LowRDS(ON) ⚫100EASGuaranteed ⚫GreenDeviceAvailable Applications ⚫LoadSwitch ⚫LEDApplications ⚫NetworkingApplications ⚫QuickCharger | FETEKFETek Technology Corp. 台灣東沅公司 東沅科技股份有限公司 | FETEK | ||
N-ChannelPowerMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •90A,150V,RDS(on)=0.018Ω@VGS=10V •Lowgatecharge(typical220nC) •LowCrss(typical200pF) •Fastswitching •1 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelPowerMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •90A,150V,RDS(on)=0.018Ω@VGS=10V •Lowgatecharge(typical220nC) •LowCrss(typical200pF) •Fastswitching •1 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelPowerMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelPowerMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelPowerMOSFET Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Features •90A,150V,RDS(on)=0.018Ω@VGS=10V •Lowgatecharge(typical220nC) •LowCrss(typical200pF) •Fastswitching •1 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=90A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.018Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PreliminaryTechnicalInformationTrenchGatePowerMOSFETN-ChannelEnhancementMode | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PreliminaryTechnicalInformationTrenchGatePowerMOSFETN-ChannelEnhancementMode | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor •FEATURES •DrainSourceVoltage-:VDSS=150V(Min) •Staticdrain-sourceon-resistance:RDS(on)≤16mΩ@VGS=10V •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATION •DC/DCConverters •HighCurrentSwitchingApplication | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementMode HighCurrentMegaMOS™FET N-ChannelEnhancementMode Features •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Internationalstandardpackage •Fastswitchingtimes Applications •Motorcontrols •DCchoppers •Switched-modepowersupplies Advantages •Easyto | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PreliminaryTechnicalInformationTrenchGatePowerMOSFETN-ChannelEnhancementMode | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SUMIDA |
2021+ |
N/A |
6800 |
只有原装正品 |
询价 | ||
CET |
2017+ |
TO-220 |
23589 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 | ||
CET/华瑞 |
2022+ |
TO-220 |
5000 |
全现原装公司现货 |
询价 | ||
CET/华瑞 |
19+ |
TO-220 |
67774 |
原厂代理渠道,每一颗芯片都可追溯原厂； |
询价 | ||
NUVOTON |
18+ |
TO-220 |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
23+ |
N/A |
49000 |
正品授权货源可靠 |
询价 | |||
CET |
2020+ |
TO-220 |
32630 |
公司代理品牌,原装现货超低价清仓! |
询价 | ||
CET |
21+ |
TO-220 |
35200 |
一级代理/放心采购 |
询价 | ||
CET(华瑞) |
2112+ |
TO-220(TO-220-3) |
105000 |
50个/管一级代理专营品牌!原装正品,优势现货,长期 |
询价 | ||
C |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
询价 |
相关规格书
更多- CEP90P04
- CEP912
- CEP93A3
- CEP95P04
- CEP99
- CEP99-102
- CEP99B
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- CER0002A
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相关库存
更多- CEP911
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- CEPFZ44
- CEPH149
- CEPH149NP-1R0MC
- CEPH149NP-1R6MC
- CEPH149NP-2R4MC
- CEPH1710
- CEPH1710_06
- CEPH199
- CEPH205
- CEPH205_06
- CEPH209
- CEPLZ44
- CER0001A
- CER0003A
- CER0005A
- CER0021A
- CER0032A
- CER0034A_16
- CER0069A
- CER0074B
- CER0080B
- CER0104A
- CER0109A
- CER0110A
- CER0111A
- CER0121A
- CER0126A
- CER0130A
- CER0137A
- CER0139B
