CEB68N10L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V,69A,RDS(ON)=9.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=13mW@VGS=4.5V.

ADM68N10Q

N-ChannelEnhancementModeFieldEffectTransistor

Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●100%EASGuaranteed ●OptimizedV(BR)DSSRuggedness ●Lead-Free,RoHSCompliant Description: TheADM68N10QusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)with

CEP68N10L

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES 100V,69A,RDS(ON)=9.8mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=13mW@VGS=4.5V.

GLU68N10

SURFCOILSMTINDUCTORS

GLX68N10

SURFCOILSMTINDUCTORS