Ultra Low VF SMD Schottky Barrier Rectifiers

文件：95.04 Kbytes 页数：4 Pages

COMCHIP

典琦

丝印：CDB0465G1；Package：TO-263；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Positive Temperature Coefficient on VF  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 612

文件：1.89653 Mbytes 页数：5 Pages

PANJIT

強茂

丝印：CDB0665G1；Package：TO-263；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Positive Temperature Coefficient on VF  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 612

文件：1.78266 Mbytes 页数：5 Pages

PANJIT

強茂

丝印：CDB0865G1；Package：TO-263；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Positive Temperature Coefficient on VF  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 612

文件：1.85066 Mbytes 页数：5 Pages

PANJIT

強茂

丝印：CDB10120G1；Package：TO-263；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Positive Temperature Coefficient on VF  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 612

文件：1.86609 Mbytes 页数：5 Pages

PANJIT

強茂

丝印：CDB1065G1；Package：TO-263；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Positive Temperature Coefficient on VF  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 612

文件：1.83123 Mbytes 页数：5 Pages

PANJIT

強茂

丝印：CDB20120G1；Package：TO-263；Silicon Carbide Schottky Barrier Diode

Features  Temperature Independent Switching Behavior  High Surge Current Capability  Positive Temperature Coefficient on VF  Low Conduction Loss  Zero Reverse Recovery  High junction temperature 175 oC  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 612

文件：1.79433 Mbytes 页数：5 Pages

PANJIT

強茂

萧特基二极管 Schottky Diodes

Crownpo

冠宝

萧特基二极管 Schottky Diodes

Crownpo

冠宝

萧特基二极管 Schottky Diodes

Crownpo

冠宝